Abstract: Embodiments of the present disclosure describe techniques for implementing enhanced skew control for synchronizing two clock meshes in an IC or chip. A disclosed skew adjust control, methods, and systems enable effective and efficient operations to optimize a coarse delay setting to maintain for a functional mode of operation of the system, where only fine delay steps are applied to an adjustable one of the clock meshes, based on measured clock skew, to synchronize the clock meshes.

Abstract: Embodiments of the present disclosure describe techniques for implementing enhanced skew control for synchronizing two clock meshes in an IC or chip. A disclosed skew adjust control, methods, and systems enable effective and efficient operations to optimize a coarse delay setting to maintain for a functional mode of operation of the system, where only fine delay steps are applied to an adjustable one of the clock meshes, based on measured clock skew, to synchronize the clock meshes.

Abstract: A method for producing a sinter layer connection between a substrate and a chip resulting in an electric and thermal connection therebetween and in reduced mechanical tensions within the chip. The method produces a sinter layer by applying a multitude of sinter elements of a base material forming the sinter layer in structured manner on a contact area of a main surface of a substrate; placing a chip to be joined to the substrate on the sinter elements; and heating and compressing the sinter elements to produce a structured sinter layer connecting the substrate and chip and extending within the contact area, the surface coverage density of the sinter elements on the substrate in a center region of the contact area being greater than the surface coverage density of the sinter elements in an edge region of the contact area, and at least one through channel, extending laterally as to the substrate's main surface being provided towards the contact area's edge.

Abstract: A commutation cell having at least one electrical capacitor, at least one controllable semiconductor switch and at least one semiconductor which is connected in series with the controllable semiconductor switch. The commutation cell has three circuit substrates situated in parallel with one another. The controllable semiconductor switch is connected in series with the semiconductor via a circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, and the two remaining circuit substrates being connected to one another in an electrically conductive manner via a subassembly made up of the controllable semiconductor switch, the semiconductor and the circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, the electrical capacitor being switched between the two remaining circuit substrates, separately from the subassembly.

Abstract: Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (20), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (20, 30), a region with at least one intermetallic phase (40) is formed between the first layer and the second layer, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melti

Abstract: A commutation cell having at least one electrical capacitor, at least one controllable semiconductor switch and at least one semiconductor which is connected in series with the controllable semiconductor switch. The commutation cell has three circuit substrates situated in parallel with one another. The controllable semiconductor switch is connected in series with the semiconductor via a circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, and the two remaining circuit substrates being connected to one another in an electrically conductive manner via a subassembly made up of the controllable semiconductor switch, the semiconductor and the circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, the electrical capacitor being switched between the two remaining circuit substrates, separately from the subassembly.

Abstract: An electrically conductive contact layer (4) is provided with a joining material (9) during a method for producing a piezoelectric component (1), in particular a piezoelectric sensor (1). To this end, the electrically conductive contact layer (4) can be dipped into a paste that serves to form the joining material (9). The contact layer (4) provided with the joining material (9) is subsequently disposed between a first piezoceramic layer (2) and a second piezoceramic layer (3). The contact layer (4) is then inserted via the joining material (9) between the first piezoceramic layer (2) and the second piezoceramic layer (3), wherein a pressure is applied to the first piezocermaic layer (2) against the second piezoceramic layer (3).

Abstract: The invention relates to a method for connecting at least two components (18, 20) using a sintering process. The aim of the invention is to improve the sintering process.

Abstract: The invention relates to a method for joining a semiconductor (20) to a substrate (10), comprising the following steps: •applying a first paste layer (1) of a sintering paste to the substrate; •heating and compressing the first paste layer to form a first sintered layer; •applying a second paste layer (2) of a sintering paste to the first sintered layer and arranging a semiconductor (20) on the second paste layer; •heating and compressing the second paste layer (2) to form a second sintered layer. The invention further relates to a semiconductor component produced by means of the method.

Abstract: Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (20), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (20, 30), a region with at least one intermetallic phase (40) is formed between the first layer and the second layer, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melti

Abstract: The invention relates to a layered composite (10), in particular for connecting electronic components as joining partners, comprising at least one substrate film (11) and a layer assembly (12) applied to the substrate film. The layer assembly comprises at least one sinterable layer (13), which is applied to the substrate film (11) and which contains at least one metal powder, and a solder layer (14) applied to the sinterable layer (13). The invention further relates to a method for forming a layered composite, to a circuit assembly containing a layered composite (10) according to the invention, and to the use of a layered composite (10) in a joining method for electronic components.

Abstract: A method for producing a sinter layer connection between a substrate and a chip resulting in an electric and thermal connection therebetween and in reduced mechanical tensions within the chip. The method produces a sinter layer by applying a multitude of sinter elements of a base material forming the sinter layer in structured manner on a contact area of a main surface of a substrate; placing a chip to be joined to the substrate on the sinter elements; and heating and compressing the sinter elements to produce a structured sinter layer connecting the substrate and chip and extending within the contact area, the surface coverage density of the sinter elements on the substrate in a center region of the contact area being greater than the surface coverage density of the sinter elements in an edge region of the contact area, and at least one through channel, extending laterally as to the substrate's main surface being provided towards the contact area's edge.

Abstract: An electrically conductive contact layer (4) is provided with a joining material (9) during a method for producing a piezoelectric component (1), in particular a piezoelectric sensor (1). To this end, the electrically conductive contact layer (4) can be dipped into a paste that serves to form the joining material (9). The contact layer (4) provided with the joining material (9) is subsequently disposed between a first piezoceramic layer (2) and a second piezoceramic layer (3). The contact layer (4) is then inserted via the joining material (9) between the first piezoceramic layer (2) and the second piezoceramic layer (3), wherein a pressure is applied to the first piezocermaic layer (2) against the second piezoceramic layer (3).

Abstract: A composite component includes a first joining partner, at least one second joining partner and a first joining layer situated between the first joining partner and the second joining partner. In addition to the first joining layer, at least one second joining layer is provided between the first and the second joining partner; and at least one intermediate layer is situated between the first and the second joining layer.

Abstract: The invention relates to an electrical and electronic composite component (1), comprising a first joining partner (2) and at least one second joining partner (3). The invention provides for an openly porous sintered shaped part (6, 7) to be accommodated between the first and the second joining partners (2, 3), said sintered shaped part being sintered by sintering by means of sintering paste with the first and the second joining partners (2, 3). The invention furthermore relates to a production method.

Abstract: A composite component includes a first joining partner, at least one second joining partner and a first joining layer situated between the first joining partner and the second joining partner. In addition to the first joining layer, at least one second joining layer is provided between the first and the second joining partner; and at least one intermediate layer is situated between the first and the second joining layer.

Abstract: A sintering material having metallic structural particles which are provided with an organic coating. Non-organically coated, metallic and/or ceramic auxiliary particles are provided that do not outgas during the sintering process. A sintered bond, as well as a method for producing a sintered bond.

Abstract: An electrical or electronic composite component is described as having a first joining partner and at least one second joining partner. According to the present system, it is provided that a sintered compact having open porosity is accommodated between the first and the second joining partner, the sintered compact is connected fixedly to the first and to the second joining partner.

Abstract: Embodiments of an X-ray source for a mobile X-ray diagnostic unit with a C-arm include a generator vessel that may be mounted to a hollow frame of the C-arm. The generator vessel may have a first subregion with a high-voltage generator and a second subregion with an X-ray source. In some embodiments, the first subregion, the second subregion, or both subregions may be at least partially inside a portion of the hollow frame of the C-arm. The generator vessel may be at least partially filled with insulating oil for cooling the high-voltage generator and/or the X-ray source.

Abstract: Embodiments of an X-ray source for a mobile X-ray diagnostic unit with a C-arm include a generator vessel that may be mounted to a hollow frame of the C-arm. The generator vessel may have a first subregion with a high-voltage generator and a second subregion with an X-ray source. In some embodiments, the first subregion, the second subregion, or both subregions may be at least partially inside a portion of the hollow frame of the C-arm. The generator vessel may be at least partially filled with insulating oil for cooling the high-voltage generator and/or the X-ray source.