Abstract: The present technology relates to depots for the treatment of postoperative pain via sustained, controlled release of a therapeutic agent. In some embodiments, the depot may comprise a therapeutic region comprising an analgesic, and a control region comprising a bioresorbable polymer and a releasing agent mixed with the polymer. The releasing agent may be configured to dissolve when the depot is placed in vivo to form diffusion openings in the control region. The depot may be configured to be implanted at a treatment site in vivo and, while implanted, release the therapeutic agent at the treatment site for no less than 3 days.

Abstract: A display may have both a full pixel density region and a pixel removal region with a plurality of high-transmittance areas that overlap an optical sensor. Each high-transmittance area may be devoid of thin-film transistors and other display components. To improve transmission while maintaining satisfactory touch sensing performance, one or more segments of the touch sensor metal in the pixel removal region may have a reduced width relative to the touch sensor metal in the full pixel density region and/or one or more segments of the touch sensor metal in the pixel removal region may be omitted relative to the touch sensor metal in the full pixel density region. To mitigate a different appearance between the pixel removal region and the full pixel density region at off-axis viewing angles, the position of the touch sensor metal in the pixel removal region may be tuned.

Abstract: A display may have both a full pixel density region and a pixel removal region with a plurality of high-transmittance areas that overlap an optical sensor. Each high-transmittance area may be devoid of thin-film transistors and other display components. To improve transmission while maintaining satisfactory touch sensing performance, one or more segments of the touch sensor metal in the pixel removal region may have a reduced width relative to the touch sensor metal in the full pixel density region and/or one or more segments of the touch sensor metal in the pixel removal region may be omitted relative to the touch sensor metal in the full pixel density region. To mitigate a different appearance between the pixel removal region and the full pixel density region at off-axis viewing angles, the position of the touch sensor metal in the pixel removal region may be tuned.

Abstract: A display may include pixels (such as light-emitting diode pixels) that are susceptible aging effects (burn-in). To help avoid visible artifacts caused by burn-in during operation of the display, compensation circuitry may be used to compensate image data for the display. An optical sensor may be included behind the pixels to directly measure pixel brightness levels. The optical sensor may provide optical sensor data from testing operations to the compensation circuitry. The optical sensor may gather data during burn-in testing operations. During the burn-in testing operations, pixel groups including both high-usage pixels and low-usage pixels may sequentially emit light while the optical sensor gathers data. Brightness differences between the high-usage pixels and low-usage pixels may be used to characterize pixel aging in the display and compensate image data to mitigate visible artifacts caused by burn-in. The optical sensor may also gather data during global brightness testing operations.

Abstract: A display may have an array of organic light-emitting diode display pixels. Each display pixel may include a drive transistor coupled in series with one or more emission transistors and a respective organic light-emitting diode (OLED). A semiconducting-oxide transistor may be coupled between a drain terminal and a gate terminal of the drive transistor to help reduce leakage during low-refresh-rate display operations. To compensate for variations in the threshold voltage of the semiconducting-oxide transistor, the magnitude of a high voltage level of a scan control signal provided to the gate terminal of the semiconducting-oxide transistor may be adjusted. Sensing circuitry may be used to sense a display current while displaying a calibration image. The sensed display current may be compared to an expected display current associated with the calibration image. Processing circuitry may update the high voltage level based on the actual display current compared to the expected display current.

Abstract: A display driver is disclosed that reduces first frame dimming and flicker in light-emitting diode pixels of a display device. The display driver may receive a display brightness value and determine a value of a dynamic supply voltage parameter based on the display brightness value. Over a first time interval, the display driver may apply a supply voltage that is based on the dynamic supply voltage parameter to one of a gate of a drive transistor of a light-emitting-diode circuit and a channel of the drive transistor. Over a second time interval, the display driver may apply a parking voltage to an anode of a light-emitting diode of the light-emitting-diode circuit and to the channel of the drive transistor. The value of the parking voltage may be below a threshold voltage of the light-emitting diode and correspond to the value of the dynamic supply voltage parameter.

Abstract: A display driver is disclosed that reduces first frame dimming and flicker in light-emitting diode pixels of a display device. The display driver may receive a display brightness value and determine a value of a dynamic supply voltage parameter based on the display brightness value. Over a first time interval, the display driver may apply a supply voltage that is based on the dynamic supply voltage parameter to one of a gate of a drive transistor of a light-emitting-diode circuit and a channel of the drive transistor. Over a second time interval, the display driver may apply a parking voltage to an anode of a light-emitting diode of the light-emitting-diode circuit and to the channel of the drive transistor. The value of the parking voltage may be below a threshold voltage of the light-emitting diode and correspond to the value of the dynamic supply voltage parameter.

Abstract: A display may have an array of organic light-emitting diode display pixels. Each display pixel may include a drive transistor coupled in series with one or more emission transistors and a respective organic light-emitting diode (OLED). A semiconducting-oxide transistor may be coupled between a drain terminal and a gate terminal of the drive transistor to help reduce leakage during low-refresh-rate display operations. To compensate for variations in the threshold voltage of the semiconducting-oxide transistor, the magnitude of a high voltage level of a scan control signal provided to the gate terminal of the semiconducting-oxide transistor may be adjusted. Sensing circuitry may be used to sense a display current while displaying a calibration image. The sensed display current may be compared to an expected display current associated with the calibration image. Processing circuitry may update the high voltage level based on the actual display current compared to the expected display current.

Abstract: By judicious engineering of grating parameters such as tooth shape, duty cycle and phase offset, the grating strengths and effective indices of the polarization modes of a grated waveguide are adjusted over a wide range of values to achieve a desired level of polarization sensitivity, or insensitivity. In the typical example, the physical geometry of the grating teeth is adjusted so that degenerate behavior (nTE=nTM and ?TE=?TM) is obtained for two polarization modes; the effective refractive indices and grating strengths are matched for the TE and TM polarization modes. In the current embodiment the sidewall gratings are used in which the tooth profile is selected in order to equalize the grating strength for each polarization mode.

Abstract: A diffraction grating of non-uniform strength is introduced into an optical waveguide by modulating its width. The waveguide may be fabricated using one of several planar processing techniques. Varying the size, position, and/or thickness of the grating teeth provides the desired variation of grating strength. Certain functional variations of grating strength suppress side-lobe levels in the grating reflection and transmission spectra. This process, termed apodization, is necessary for precise wavelength filtering and dispersion compensation. If desired, different periodicity gratings can be introduced in each side of the waveguide, multiple periodicities can be superimposed, the grating can be angled with respect to the waveguide, and the grating period and phase can be varied.

Abstract: By judicious engineering of grating parameters such as tooth shape, duty cycle and phase offset, the grating strengths and effective indices of the polarization modes of a grated waveguide are adjusted over a wide range of values to achieve a desired level of polarization sensitivity, or insensitivity. In the typical example, the physical geometry of the grating teeth is adjusted so that degenerate behavior (nTE=nTM and &kgr;TE=&kgr;TM) is obtained for two polarization modes; the effective refractive indices and grating strengths are matched for the TE and TM polarization modes. In the current embodiment the sidewall gratings are used in which the tooth profile is selected in order to equalize the grating strength for each polarization mode.

Abstract: Techniques are disclosed to compensate for distortions in lithography by locally heating the membrane in a lithographic mask. The techniques may be used both to shrink and to expand areas of the mask locally, in order to adjust for varying magnitudes and signs of distortion. In one embodiment the correction method comprises two steps: (1) A send-ahead wafer is exposed and measured by conventional means to determine the overlay errors at several points throughout the field. (2) During exposure of subsequent wafers, calibrated beams of light are focused on the mask. The heating from the absorbed light produces displacements that compensate for the overlay errors measured with the send-ahead wafer. Any source of distortion may be corrected—for example, distortion appearing on the mask initially, distortion that only develops on the mask over time, or distortion on the wafer.