Abstract: A method of fabricating a device is provided. A substrate having first conductive layer disposed thereon. An organic layer is fabricated over the first conductive layer. A second conductive layer is then fabricated over the organic layer such that the second conductive layer is in electrical contact with the first conductive layer during at least a portion of the step of depositing the second conductive layer. The electrical contact between the first conductive layer and the second conductive layer is then broken. A method of fabricating an active matrix array of organic light emitting devices is also provided. A substrate is obtained, having circuitry adapted to control the current flowing through each organic light emitting device, and having a first conductive layer disposed thereon, such that the first conductive layer is electrically attached to the circuitry. An organic layer is fabricated over the first conductive layer.

Abstract: A method of fabricating a device is provided. A substrate having first conductive layer disposed thereon. An organic layer is fabricated over the first conductive layer. A second conductive layer is then fabricated over the organic layer such that the second conductive layer is in electrical contact with the first conductive layer during at least a portion of the step of depositing the second conductive layer. The electrical contact between the first conductive layer and the second conductive layer is then broken. A method of fabricating an active matrix array of organic light emitting devices is also provided. A substrate is obtained, having circuitry adapted to control the current flowing through each organic light emitting device, and having a first conductive layer disposed thereon, such that the first conductive layer is electrically attached to the circuitry. An organic layer is fabricated over the first conductive layer.

Abstract: An active matrix display and method of driving the same is provided. The active matrix display comprises an array of pixels, each pixel including an organic light emitting device and at least one thin film transistor. A uniformity correction circuit that is capable of producing a selected pixel brightness is connected to the array of pixels. The uniformity correction circuit is capable of maintaining the brightness of the pixels in a range that does not vary, for example, by more than about 5-10% from their selected brightness values.

Abstract: A thin-film structure on an insulating substrate includes an array of binary control units with an area of at least 90 cm.sup.2 and a density of at least 60 binary control units per cm. One implementation has an area of approximately 510 cm.sup.2, a diagonal of approximately 33 cm, and a total of approximately 6.3 million binary control units. Each binary control unit has a lead for receiving a unit drive signal, to which it responds by causing presentation of a segment of images presented by the array. Each binary control unit can present a segment with either a first color having a maximum intensity or a second color having a minimum intensity. Each binary control unit's unit drive signal causes the binary control unit to present its first and second colors. The substrate can be glass. Each binary control unit can include an amorphous silicon thin-film transistor (TFT) and a storage capacitor. Each binary control unit can be square.

Abstract: A light sensing and display driving apparatus is operable independent of polling cycle providing a more accurate sensing of the patterns of illumination incident on an array of such apparatus, with a minimum of required interconnections per pixel. Each address line may simultaneously initialize one row of apparatus while enabling the subsequent row of apparatus. The apparatus is also compatible with elements capable of providing gain in the sensing mode, given that the photosensitive element is separate from the path across which voltage or current is measured. The display driving portion is compatible with standard active-matrix LCDs. The apparatus allows a minimum physical isolation between the sensing and display portions while maintaining sufficient electrical isolation to prevent the deleterious effects resulting from application of a display driving potential to sensing circuitry, and allows employing a timing scheme for both sensing and display driving within a short time period.

Abstract: A light sensing apparatus adaptable for inclusion in an array of such apparatus is operable independent of polling cycle providing a more accurate sensing of the patterns of illumination incident on an array of such apparatus. The apparatus facilitates utlizing each address line to simultaneously initialize one row of apparatus while enabling the subsequent row of apparatus. The apparatus is also compatible with elements capable of providing gain, given that the photosensitive element is separate from the path across which voltage or current is measured. The apparatus may be fabricated of amorphous silicon. The light sensing cell includes an input terminal, an output terminal, a conductive element electrically interconnecting the input and output terminals, a multiple-state sensing device, means for establishing an initial state of the sensing device, means for changing the initial state of the sensing device in response to the incidence of electromagnetic or ionizing radiation (e.g.

Abstract: A method of utilizing a thin film device as a photosensor. The thin film device comprises a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in low electrical resistance contact with the charge transport layer, the injecting electrodes being laterally spaced from one another, a gate electrode spaced normally from the first and second injecting electrodes and located opposite the first injecting electrode, for controlling injection therefrom, and laterally offset from the second injecting electrode, and a gate dielectric layer separating the gate electrode from the first and second injecting electrodes and the charge transport layer.

Abstract: An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobility gap and the spontaneous creation of a surplus number of metastable defects in the mobility gap located in opposition to the shift in the Fermi level, and a recovery layer comprising a doped non-single crystal semiconductor layer positioned in proximity to the active layer and responsive to the application of stress upon the device by changing the number of active dopant atoms therein and thereby changing the charge in the recovery layer, for allowing the excess charge to spill over to the active layer for accelerating the return of the active layer to its equilibrium state.

Abstract: A high voltage thin film transistor comprising a charge transport layer, source and drain electrodes laterally spaced from one another and each being in low electrical resistance contact with the charge transport layer, a gate electrode spaced normally from the source and drain electrodes and extending laterally with one edge in the vicinity of the source electrode and an opposite edge located between the source and drain electrodes, and a gate dielectric layer separating the gate electrode from the source and drain electrodes and the charge transport layer, in the normal direction wherein the gate electrode and the source and drain electrodes are located on the same side of the charge transport layer.

Abstract: A thin film transistor and optical sensor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, a source electrode comprising finger elements, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, a drain electrode layer contiguous with the semiconductor layer, barrier elements for inhibiting a drain field from reaching the source electrode, and a transparent, electrically conductive drain contact member contiguous with said drain electrode layer, through which optical energy may pass to the semiconductor layer.

Abstract: A thin film transistor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, at least one finger-like source electrode, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, and a drain electrode layer contiguous with the semiconductor layer. The length of the current path between the source electrode and the drain electrode layer is defined by a first path portion located at the semiconductor/gate dielectric interface and extending, between adjacent source elements, substantially parallel to the interface, and a second path portion whose length is substantially coextensive with the thickness of the semiconductor layer.

Abstract: A high voltage thin film transistor comprising an amorphous semiconductor charge transport layer, laterally disposed source and drain electrodes, a first control electrode with one edge laterally overlapping the source electrode and an other edge laterally spaced from the drain electrode. A source of high potential is applied to the drain electrode and a source of low potential is applied to the first control electrode in a time varying manner so as to form an accumulation channel in the charge transport layer, opposite to the first control electrode. Device performance is improved by including a second control electrode disposed in the same plane as the first control electrode and biased for preventing the formation of defects within the charge transport layer adjacent the other edge.

Abstract: An improved photovoltaic device characterized by long term stability in its photoconversion ability. The device is adapted to absorb incident light throughout a substantial portion of the bulk of the photoactive region thereof in a substantially uniform manner. Said uniform absorption of light is provided by grading the band gap of at least a portion of the semiconductor material of the photoactive region thereof such that the graded portions most proximate the light incident surface of the photovoltaic device have a wider band gap than do those portions more distal from the light incident surface. The band gap gradation may be smooth or stepped, and may be accomplished by compositional variation of the semiconductor materials forming the photoactive region. A method for fabricating the stable photovoltaic device of the instant invention is also provided.