Patents by Inventor Michael Han Kim Kwong

Michael Han Kim Kwong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Shielded magnetoresistive random access memory devices and methods for fabricating the same
    Patent number: 10431732
    Abstract: Shielded semiconductor devices and methods for fabricating shielded semiconductor devices are provided. An exemplary magnetically shielded semiconductor device includes a substrate having a top surface and a bottom surface. An electromagnetic-field-susceptible semiconductor component is located on and/or in the substrate. The magnetically shielded semiconductor device includes a top magnetic shield located over the top surface of the substrate. Further, the magnetically shielded semiconductor device includes a bottom magnetic shield located under the bottom surface of the substrate. Also, the magnetically shielded semiconductor device includes a sidewall magnetic shield located between the top magnetic shield and the bottom magnetic shield.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: October 1, 2019
    Assignees: GLOBALFOUNDRIES SINGAPORE PTE. LTD., AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
    Inventors: Bhushan Bharat, Shan Gao, Danny Pak-Chum Shum, Wanbing Yi, Juan Boon Tan, Wei Yi Lim, Teck Guan Lim, Michael Han Kim Kwong, Eva Wai Leong Ching
  • SHIELDED SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING SHIELDED SEMICONDUCTOR DEVICES
    Publication number: 20180351078
    Abstract: Shielded semiconductor devices and methods for fabricating shielded semiconductor devices are provided. An exemplary magnetically shielded semiconductor device includes a substrate having a top surface and a bottom surface. An electromagnetic-field-susceptible semiconductor component is located on and/or in the substrate. The magnetically shielded semiconductor device includes a top magnetic shield located over the top surface of the substrate. Further, the magnetically shielded semiconductor device includes a bottom magnetic shield located under the bottom surface of the substrate. Also, the magnetically shielded semiconductor device includes a sidewall magnetic shield located between the top magnetic shield and the bottom magnetic shield.
    Type: Application
    Filed: May 31, 2017
    Publication date: December 6, 2018
    Inventors: Bhushan Bharat, Shan Gao, Danny Pak-Chum Shum, Wanbing Yi, Juan Boon Tan, Wei Yi Lim, Teck Guan Lim, Michael Han Kim Kwong, Eva Wai Leong Ching