Abstract: The disclosure relates to an electronic memory system, and more specifically, to a system for storing data in an adjustably partitionable memory array, and a method to store data in an adjustably partitionable memory array. According to an embodiment of the disclosure, a system to store data in an adjustably partitionable memory array is provided, the system including a plurality of memory cells arranged in an array of rows and columns, a plurality of bit lines, and a plurality of switches, wherein each bit line is electrically coupled to a column of memory cells and each bit line comprises a switch configured to allow the respective bit line to be partitioned by opening of the switch.

Abstract: The disclosure relates to an electronic memory system, and more specifically, to a system for storing data in an adjustably partitionable memory array, and a method to store data in an adjustably partitionable memory array. According to an embodiment of the disclosure, a system to store data in an adjustably partitionable memory array is provided, the system including a plurality of memory cells arranged in an array of rows and columns, a plurality of bit lines, and a plurality of switches, wherein each bit line is electrically coupled to a column of memory cells and each bit line comprises a switch configured to allow the respective bit line to be partitioned by opening of the switch.

Abstract: A fabric includes warp and weft yarns interwoven in a series of repeat units. In the fabric, the warp yarns comprise cotton yarns and the weft yarns comprise microdenier filament bundles. Such a fabric can provide desirable tactile properties for articles such as sheets, pillowcases, blankets and the like.

Abstract: A textile fabric comprises a plurality of weft yarns extending generally in a weft direction and a plurality of flat film warp yarns extending generally in a warp direction. The warp yarns are interwoven with the weft yarns in a series of identical repeating units of a predetermined weave pattern. The flat film warp yarns, which are preferably between about 10 and 40 .mu.m in thickness and 0.010 and 0.025 inches in width, are preferably interwoven with the weft yarns such that, in each of the identical repeating units, the weft yarns are interwoven as coupled pairs, such that a first yarn of each of the coupled pairs follows the same interweaving pattern relative to each of the flat film warp yarns as a second yarn of that pair. This configuration, known as a "double-pick" configuration, can produce a fabric that has acceptable appearance and feel, but at a considerably lower cost than typical textile fabrics of comparable weight because of the presence of the flat film warp yarns.

Abstract: The present invention utilizes a dual frequency data writing scheme. At a first frequency, flux transitions are achieved which result in large excursions of the information signal. In the preferred embodiment, the first frequency approximates the maximum frequency at which such excursions can occur. A second higher frequency is utilized to create the very small or no excursions. At this second higher frequency, a complex flux transition is not achieved. Therefore, there is little or no information signal. Information is represented by the presence or absence of excursions. In the preferred embodiment, the first frequency is approximately 33,000 flux changes per inch, and the second frequency is approximately 67,000 flux changes per inch. In order to detect data written by the present scheme, an adaptive, self-compensating scheme is utilized. The present invention utilizes an excursion detection scheme which is pattern and radii independent.