Abstract: A bitcell for storing a charge state, the bitcell including a spin hall metal for passing through a charge current, a magneto tunnel junction (MTJ) stack for generating and storing a non-volatile spin state corresponding to a binary bit in response to passage of the charge current through the spin hall metal, and for inducing the charge current corresponding to the non-volatile spin state in response to application of a read voltage, first and second write bitlines for sourcing the charge current through the spin hall metal in response to a write voltage being applied to both of the first and second write bitlines, and a read bitline for inducing the charge current through the spin hall metal in response to the read voltage being applied to the read bitline, and a first wordline and a second wordline for permitting a flow of the charge current through spin hall metal.

Abstract: An apparatus for infrared imaging may include a hybrid infrared focal plane array including a front-end (FE) portion and a back-end (BE) portion. The FE portion may be coupled to the BE portion via multiple electrically conductive bump bonds. The FE portion may include nano-electronic circuits integrated with an array of infrared imaging pixels. The CNT electronic circuits may be configured to generate multiplexed output signals. The BE portion may include electronic circuits implemented on a substrate and configured to generate readout output signals. A count of the multiple electrically conductive bump bonds may be substantially less than a count of the infrared imaging pixels of the array.

Abstract: A method for manufacturing an organic semiconductor device having a plurality of pixels, said method comprising: providing a substrate comprising a patterned layer of well-defining banks (308); depositing a first conductive material (310, 312) in the wells and over the well-defining banks (308), the first conductive material forming first electrodes (310) in the wells and bus-bars (312) over the well-defining banks (308) with an electrical break therebetween; depositing an organic semiconductive layer (318) over the first electrodes (310) in the wells; and depositing a second conductive material (320) over both the organic semiconductive layer (318) and the bus-bars (312) forming a continuous second electrode (320) over the organic semiconductive layer (318) and the bus-bars (312).

Abstract: A method for manufacturing an organic semiconductor device having a plurality of pixels, said method comprising: providing a substrate comprising a patterned layer of well-defining banks (308); depositing a first conductive material (310, 312) in the wells and over the well-defining banks (308), the first conductive material forming first electrodes (310) in the wells and bus-bars (312) over the well-defining banks (308) with an electrical break therebetween; depositing an organic semiconductive layer (318) over the first electrodes (310) in the wells; and depositing a second conductive material (320) over both the organic semiconductive layer (318) and the bus-bars (312) forming a continuous second electrode (320) over the organic semiconductive layer (318) and the bus-bars (312).

Abstract: A method of manufacturing an organic thin film transistor, comprising: providing a substrate comprising source and drain electrodes defining a channel region; forming a patterned layer of insulting material defining a well surrounding the channel region; depositing a protective layer in the well; subjecting exposed portions of the patterned layer of insulating material to a de-wetting treatment to lower the wettability of the exposed portions; removing the protective layer; and depositing organic semiconductive material from solution into the well.