Abstract: A method and corresponding device structure includes depositing a metal fill material on at least one electrical connection formed in a feature formed within a first dielectric layer of a semiconductor device structure, wherein the metal fill material completely fills the feature. The method further includes depositing a protective layer over an upper surface of the metal fill material, and depositing a barrier layer over the protective layer.

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

Abstract: Methods of depositing a liner layer in a semiconductor device are described. In some embodiments, the method includes depositing a carbon layer including carbon on a substrate, the substrate having at least one feature including a sidewall surface and the carbon layer having a carbon surface; and selectively depositing the liner layer on the sidewall surface over the carbon surface. In other embodiments, the method includes depositing a carbon layer comprising carbon in a bottom second portion of a substrate feature selectively over a top first portion of the substrate feature, the top first portion having a sidewall surface, the carbon layer having a carbon surface; etching the carbon surface; and depositing the conformal layer on the sidewall surface of the top first portion, the conformal layer deposited on the sidewall surface selectively over the carbon surface.

Abstract: Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: Disclosed herewith are a precursor, a gas mixture, and a method for depositing a dielectric film in a processing chamber. A method includes disposing a substrate on a susceptor disposed within a processing chamber; controlling a pressure level and a temperature of the processing chamber; delivering an RF power into the processing chamber; providing a precursor-containing gas mixture into the processing chamber, and applying a post-deposition process to the substrate after the dielectric film is formed on the substrate. The precursor-containing gas mixture includes a precursor and an inert gas selected from the group consisting of argon, nitrogen, and helium. The precursor includes a carbosilane having a Si—C—Si structure in a backbone of the precursor.

Abstract: Chalcogen silane precursors having electron withdrawing groups are described. Methods for depositing one or more of a silicon nitride (SixNy) film, a silicon oxide (SiOx) film, or a silicon oxynitride (SiOxNz) on a substrate are described. The substrate is exposed to the chalcogen silane precursor and a reactant to deposit the silicon nitride (SixNy) film, the silicon oxide (SiOx) film, and/or the silicon oxynitride (SiOxNz) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Abstract: A method includes depositing a contact capping layer over a surface of a contact structure, the contact capping layer deposition process comprising flowing hydrogen (H2) and a silicon containing gas into a processing chamber, and delivering a molybdenum (Mo) precursor for a first period of time and halting delivering of the Mo precursor for a second period of time while flowing the hydrogen (H2) and the silicon containing gas, and repeating delivering the Mo precursor and halting delivering the Mo precursor one or more times while flowing the hydrogen (H2) and the silicon containing gas.

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

Abstract: The methods of the present disclosure enable formation of highly conductive contacts that facilitate in increasing the device speed and lowering the operating voltages of semiconductor devices such as, but not limited to, metal-on-semiconductor (MOS) transistors and the like. In one embodiment, the methods create the optimal contacts, useful in N type or P type MOS devices, by forming metal-insulator-semiconductor (MIS) contact structure or a non-stoichiometric layer contact structure. It is noted that N type or P type contacts require different work function metals to achieve a low Schottky barrier height (SBH).

Abstract: One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing titanium nitride (TiN) in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as finFETs, GAAs, and the like, without creating a seam. The methods include selective deposition processes using blocking compounds in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Abstract: A crested barrier memory device may include a first electrode, a first self-rectifying layer, and a combined barrier and active layer. The first self-rectifying layer may be between the first electrode and the active layer. A conduction band offset between the first self-rectifying layer and the combined barrier and active layer may be greater than approximately 1.5 eV. A valence band offset between the first self-rectifying layer and the combined barrier and active layer may be less than approximately ?0.5 eV. The device may also include a second electrode. The active layer may be between the first self-rectifying layer and the second electrode.

Abstract: Semiconductor processing methods are described for forming low-? dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule, such as a boron-containing compound, to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

Abstract: Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: Methods of forming interconnects and electronic devices are described. Methods of forming interconnects include forming a tantalum nitride layer on a substrate; forming a ruthenium layer on the tantalum nitride layer; and exposing the tantalum nitride layer and ruthenium layer to a plasma comprising a mixture of hydrogen (H2) and argon (Ar) to form a tantalum doped ruthenium layer thereon. Apparatuses for performing the methods are also described.

Abstract: Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.