Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.

Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)

Abstract: An opto-electronic device includes a nucleating inhibiting coating (NIC) disposed on a first layer surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a second layer surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability for forming the conductive coating onto a surface of the NIC in the first portion, is substantially less than the initial sticking probability for forming the conductive coating onto the surface in the second portion, such that the surface of the NIC in the first portion is substantially devoid of the conductive coating.

Abstract: An electroluminescent device includes: (1) a first region, a second region, and an intermediate region arranged between the first region and the second region; (2) a conductive coating disposed in the second region; and (3) a nucleation inhibiting coating disposed in the first region, the nucleation inhibiting coating extending to cover at least a portion of the intermediate region, wherein a thickness of the nucleation inhibiting coating in the intermediate region is less than a thickness of the nucleation inhibiting coating in the first region, and wherein a surface of the nucleation inhibiting coating in the first region is substantially free of the conductive coating.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.

Abstract: An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region.

Abstract: An opto-electronic device includes a nucleation-inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating.

Abstract: An opto-electronic device includes: (1) a subpixel region including: an electrode; an organic layer disposed over the electrode; and a conductive coating disposed over the organic layer; and (2) a light transmissive region including a nucleation inhibiting coating, wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the conductive coating.

Abstract: An opto-electronic device includes a nucleating inhibiting coating (NIC) disposed on a first layer surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a second layer surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability for forming the conductive coating onto a surface of the NIC in the first portion, is substantially less than the initial sticking probability for forming the conductive coating onto the surface in the second portion, such that the surface of the NIC in the first portion is substantially devoid of the conductive coating.

Abstract: An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.

Abstract: An opto-electronic device includes: (i) a substrate having a surface; (ii) a first electrode disposed over the surface; (iii) a semiconducting layer disposed over at least a portion of the first electrode; (iv) a second electrode disposed over the semiconducting layer; (v) a nucleation inhibiting coating disposed over at least a portion of the second electrode; (vi) a patterning structure disposed over the surface, the patterning structure providing a shadowed region between the patterning structure and the second electrode; (vii) an auxiliary electrode disposed over the surface; and (viii) a conductive coating disposed in the shadowed region, the conductive coating electrically connecting the auxiliary electrode and the second electrode.

Abstract: An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region.

Abstract: An opto-electronic device includes: (i) a substrate having a surface; (ii) a first electrode disposed over the surface; (iii) a semiconducting layer disposed over at least a portion of the first electrode; (iv) a second electrode disposed over the semiconducting layer; (v) a nucleation inhibiting coating disposed over at least a portion of the second electrode; (vi) a patterning structure disposed over the surface, the patterning structure providing a shadowed region between the patterning structure and the second electrode; (vii) an auxiliary electrode disposed over the surface; and (viii) a conductive coating disposed in the shadowed region, the conductive coating electrically connecting the auxiliary electrode and the second electrode.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.

Abstract: A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.

Abstract: An opto-electronic device comprising a nucleation inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating; and wherein the NIC comprises a compound having a formula such as that illustrated by the following formula:

Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.