Abstract: An opto-electronic device comprising a nucleation inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating; and wherein the NIC comprises a compound having a formula such as that illustrated by the following formula:

Abstract: A layered semiconductor device comprising a mixed ligand compound, the mixed ligand compound comprising: a cyclophosphazene core moiety, a first ligand moiety, and a second ligand moiety. The first ligand moiety and the second ligand moiety are each bonded to the core moiety. A composition comprising a plurality of compounds, each compound thereof comprises a cyclophosphazene core moiety, and at least one ligand moiety bonded to the cyclophosphazene core moiety; the plurality of compounds comprises at least one ligand moiety in common.

Abstract: An opto-electronic device includes: (i) a substrate having a surface; (ii) a first electrode disposed over the surface; (iii) a semiconducting layer disposed over at least a portion of the first electrode; (iv) a second electrode disposed over the semiconducting layer; (v) a nucleation inhibiting coating disposed over at least a portion of the second electrode; (vi) a patterning structure disposed over the surface, the patterning structure providing a shadowed region between the patterning structure and the second electrode; (vii) an auxiliary electrode disposed over the surface; and (viii) a conductive coating disposed in the shadowed region, the conductive coating electrically connecting the auxiliary electrode and the second electrode.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: An opto-electronic device comprises first and second laterally extending defining layers deposited on a substrate. The first and second defining layers reduce EM transmission therethrough in corresponding wavelength range(s) and comprises respective first and second layer aperture(s) therein defined by corresponding first and second layer laterally extending aperture(s). A geometric intersection of the first and second layer apertures substantially defines a corresponding aperture(s) of corresponding transmissive re-gion(s). The first and second defining layers are disposed in respective lateral patterns in which at least one of a: location, shape, spacing, size, orientation, and position, of the corresponding layer aperture boundary, is respectively substantially, regular, and non-uniform. Signal(s) passing through the transmissive region(s) are impacted by a diffraction characteristic of the corresponding aperture(s) of the corresponding transmissive region(s).

Abstract: An opto-electronic device comprising a nucleation inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating; and wherein the NIC comprises a compound having a formula such as that illustrated by the following formula:

Abstract: An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.

Abstract: A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.

Abstract: A layered semiconductor device comprising a patterning coating deposited on an exposed layer surface of an underlying layer in a first portion of a lateral aspect is adapted to impact a propensity of a vapor flux of a deposited material to be condensed thereon, the patterning coating comprising a first and a second material exhibiting a respective first and second at least one material property. The patterning coating exhibits a third at least one material property that is different from at least one of the first and second at least one material property in terms of at least one of: a combination and a value thereof. The third at least one material property differentiates the exposed layer surface of the underlying layer from the exposed layer surface of the patterning coating.

Abstract: An opto-electronic device includes: (i) a substrate having a surface; (ii) a first electrode disposed over the surface; (iii) a semiconducting layer disposed over at least a portion of the first electrode; (iv) a second electrode disposed over the semiconducting layer; (v) a nucleation inhibiting coating disposed over at least a portion of the second electrode; (vi) a patterning structure disposed over the surface, the patterning structure providing a shadowed region between the patterning structure and the second electrode; (vii) an auxiliary electrode disposed over the surface; and (viii) a conductive coating disposed in the shadowed region, the conductive coating electrically connecting the auxiliary electrode and the second electrode.

Abstract: An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.

Abstract: An opto-electronic device having a plurality of layers each extending in a lateral aspect, comprises at least one emissive region extending in a first portion of the lateral aspect and a patterning coating extending in a second portion of the lateral aspect on a first layer interface. The at least one emissive region comprises first and second electrodes and at least one semiconducting layer therebetween. The second electrode comprises an electrode material. An injection layer between the at least one semiconducting layer and the second electrode comprises an injection material. The patterning coating is adapted to impact a propensity of a vapor flux of at least one of: the electrode material, and the injection material, to be condensed thereon. A distal layer interface of the patterning coating is substantially devoid of a closed coating of a material comprising at least one of: the electrode material and the injection material.

Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)

Abstract: An electroluminescent device includes: (1) a first region, a second region, and an intermediate region arranged between the first region and the second region; (2) a conductive coating disposed in the second region; and (3) a nucleation inhibiting coating disposed in the first region, the nucleation inhibiting coating extending to cover at least a portion of the intermediate region, wherein a thickness of the nucleation inhibiting coating in the intermediate region is less than a thickness of the nucleation inhibiting coating in the first region, and wherein a surface of the nucleation inhibiting coating in the first region is substantially free of the conductive coating.

Abstract: A compound, and a layered semiconductor device comprising a patterning coating provided in a first portion of a lateral aspect of the device, the patterning coating comprising the compound. The patterning coating is adapted to impact a propensity of a vapor flux of a deposited material to be condensed thereon. The compound comprises a plurality of silsesquioxane groups, including without limitation, first and second silsesquioxane groups and a linker group bonded to the first silsesquioxane group and the second silsesquioxane group, wherein at least one of the first and second silsesquioxane groups comprises a fluorine-containing moiety. The device comprises a deposited layer provided in a second portion of the lateral aspect of the device, the deposited layer comprising the deposited material.

Abstract: A formulation and a layered semiconductor device comprising a patterning coating and a deposited layer. The formulation and the patterning coating may comprise a plurality of materials. In the formulation, each material may be a patterning material. The patterning coating may be provided in a first portion and the deposited layer may be provided in a second portion of a lateral aspect of the device. The patterning coating may be adapted to impact a propensity of a vapor flux of a deposited material to be condensed thereon. The deposited layer may comprise the deposited material.

Abstract: A layered semiconductor device comprises a compound. The compound comprises a heterocyclic moiety and at least one fluorine (F)-containing moiety each bonded thereto. The heterocyclic moiety comprises nitrogen (N). The device may comprise first and second electrodes, and an active region comprising at least one semiconducting layer, where the active region is bounded, in a longitudinal aspect of the device by the electrodes and confined, in a lateral aspect of the device, to an emissive region defined by the electrodes. The active region may be substantially devoid of the compound. The device may comprise a patterning coating comprising the compound and disposed on a first layer surface of an underlying layer, in a first portion of the lateral aspect and a deposited layer comprising a deposited material and disposed on a second layer surface, where the first portion is substantially devoid of a closed coating of the deposited material.

Abstract: An opto-electronic device includes a nucleation-inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating.

Abstract: An opto-electronic device includes: (1) a subpixel region including: an electrode; an organic layer disposed over the electrode; and a conductive coating disposed over the organic layer; and (2) a light transmissive region including a nucleation inhibiting coating, wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the conductive coating.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.