Patents by Inventor Michael Helander
Michael Helander has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240099055Abstract: A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.Type: ApplicationFiled: November 13, 2023Publication date: March 21, 2024Applicant: OTI Lumionics Inc.Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG
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Publication number: 20240074230Abstract: An opto-electronic device comprising a nucleation inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating; and wherein the NIC comprises a compound having a formula such as that illustrated by the following formula:Type: ApplicationFiled: July 10, 2023Publication date: February 29, 2024Applicant: OTI LUMIONICS INC.Inventors: Michael HELANDER, Scott Nicholas GENIN, Zhibin WANG
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Publication number: 20240065082Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.Type: ApplicationFiled: September 15, 2023Publication date: February 22, 2024Applicant: OTI Lumionics, Inc.Inventors: Zhibin WANG, Qi WANG, Yi-Lu CHANG, Michael HELANDER
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Publication number: 20240008353Abstract: A layered semiconductor device comprising a compound, the compound comprising a silicon-oxygen backbone and at least one fluorine-containing moiety attached to the silicon-oxygen backbone. The compound may comprise a unit represented by: formula (I) wherein R and R? each independently represents at least one of: substituted or unsubstituted alkyl, substituted or unsubstituted fluoroalkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted fluoroalkoxy, substituted or unsubstituted siloxy, or substituted or unsubstituted fluoroalkylsiloxy, substituted or unsubstituted cycloalkyl, substituted or unsubstituted fluorocycloalkyl, substituted or unsubstituted aryl, substituted or unsubstituted fluoroaryl, or substituted or unsubstituted heteroaryl; and wherein at least one of R and R? is the fluorine-containing moiety.Type: ApplicationFiled: May 2, 2023Publication date: January 4, 2024Applicant: OTI LUMIONICS INC.Inventors: Michael HELANDER, Scott Nicholas GENIN
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Publication number: 20230413649Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one low(er)-index coating disposed on a first layer surface and at least one EM radiation-modifying layer embedded within the at least one low(er)-index coating and comprising at least one particle structure comprising a deposited material. Embedding the at least one particle structure of the at least one EM radiation-modifying layer within the at least one low(er)-index coating modifies the absorption spectrum of the at least one EM radiation-modifying layer for EM radiation passing at least partially therethrough at a non-zero angle relative to the lateral aspect therein in at least a part of the EM spectrum.Type: ApplicationFiled: October 11, 2021Publication date: December 21, 2023Applicant: OTI LUMIONICS INC.Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG, Yingjie Zhang
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Publication number: 20230413603Abstract: A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.Type: ApplicationFiled: September 29, 2021Publication date: December 21, 2023Applicant: OTI LUMIONICS INC.Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG
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Patent number: 11832473Abstract: An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region.Type: GrantFiled: November 14, 2022Date of Patent: November 28, 2023Assignee: OTI Lumionics Inc.Inventors: Michael Helander, Zhibin Wang
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Publication number: 20230371348Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.Type: ApplicationFiled: September 13, 2021Publication date: November 16, 2023Applicant: OTI Lumionics Inc.Inventors: Zhibin WANG, Qi Wang, Yi-Lu CHANG, Michael HELANDER
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Publication number: 20230363196Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)Type: ApplicationFiled: July 6, 2023Publication date: November 9, 2023Applicant: OTI LUMIONICS INC.Inventors: Yi-Lu CHANG, Qi WANG, Scott Nicholas GENIN, Michael HELANDER, Jacky QIU, Zhibin WANG, Benoit LESSARD
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Publication number: 20230354688Abstract: A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.Type: ApplicationFiled: July 6, 2023Publication date: November 2, 2023Applicant: OTI LUMIONICS INC.Inventors: Michael HELANDER, Zhibin WANG, Jacky QUI
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Publication number: 20230354677Abstract: A device having a plurality of layers comprises a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof; and a deposited layer comprised of a deposited material, disposed on a second layer surface, wherein an initial sticking probability against deposition of the deposited layer onto a surface of the NIC in the first portion is substantially less than the initial sticking probability against deposition of the deposited layer onto the second layer surface, such that the NIC is substantially devoid of a closed coating of the deposited material and wherein the NIC comprises a compound containing a rare earth element. The deposited layer can comprise a closed coating on the second layer surface in a second portion of the lateral aspect, and/or a discontinuous layer of at least one particle structure on a surface of the NIC.Type: ApplicationFiled: May 17, 2021Publication date: November 2, 2023Applicant: OTI LUMIONICS, INC.Inventors: Yi-Lu CHANG, Qi WANG, Zhibin WANG, Michael HELANDER
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Publication number: 20230354633Abstract: An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.Type: ApplicationFiled: July 10, 2023Publication date: November 2, 2023Inventors: Michael HELANDER, Zhibin WANG
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Publication number: 20230345757Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.Type: ApplicationFiled: December 7, 2021Publication date: October 26, 2023Applicant: OTI Lumionics, Inc.Inventors: Michael HELANDER, Zhibin WANG
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Patent number: 11785831Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.Type: GrantFiled: April 13, 2022Date of Patent: October 10, 2023Assignee: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi Wang, Michael Helander, Jacky Qiu, Zhibin Wang, Thomas Lever
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Publication number: 20230301160Abstract: A semiconductor device having a plurality of layers that extend in an interface portion and a non-interface portion of at least one lateral aspect defined by a lateral axis of the device. A low(er)-index layer, that may comprise a low-index material, that has a first refractive index at a wavelength, is disposed on a first layer surface in at least the interface portion. A higher-index layer, that may comprise a high-index material, that has a second refractive index at a wavelength, is disposed on an exposed layer surface of the device, to define an index interface with the low(er)-index layer in the interface portion. The second refractive index exceeds the first refractive index. A quantity of deposited material may be disposed on a second layer surface in the non-interface portion. The higher-index layer may cover the deposited material in the non-interface portion.Type: ApplicationFiled: July 24, 2021Publication date: September 21, 2023Applicant: OTI Lumionics Inc.Inventors: Qi WANG, Yi-Lu CHANG, Yingjie ZHANG, Zhibin WANG, Michael HELANDER
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Patent number: 11764320Abstract: A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.Type: GrantFiled: November 3, 2022Date of Patent: September 19, 2023Assignee: OTI Lumionics Inc.Inventors: Michael Helander, Jacky Qiu, Zhibin Wang, Zheng-hong Lu
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Patent number: 11751415Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I).Type: GrantFiled: January 2, 2019Date of Patent: September 5, 2023Assignee: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi Wang, Scott Nicholas Genin, Michael Helander, Jacky Qiu, Zhibin Wang, Benoit Lessard
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Patent number: 11737298Abstract: An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.Type: GrantFiled: December 24, 2020Date of Patent: August 22, 2023Assignee: OTI Lumionics Inc.Inventors: Michael Helander, Zhibin Wang
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Patent number: 11730012Abstract: An opto-electronic device comprising a nucleation inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating; and wherein the NIC comprises a compound having a formula such as that illustrated by the following formula (I).Type: GrantFiled: March 7, 2020Date of Patent: August 15, 2023Assignee: OTI Lumionics Inc.Inventors: Michael Helander, Scott Nicholas Genin, Zhibin Wang
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Patent number: 11730048Abstract: A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.Type: GrantFiled: May 12, 2021Date of Patent: August 15, 2023Assignee: OTI Lumionic Inc.Inventors: Michael Helander, Zhibin Wang, Jacky Qiu