Abstract: A method for sleep training includes recommending a default sleep pattern for a user based, at least in part, on crowd-sourced sleep data. The method further includes determining first sleep quality data for the user during one or more first sleep sessions subsequent to the recommending the default sleep pattern and with the user adopting the default sleep pattern in the one or more first sleep sessions. The method further includes identifying based, at least in part, on the first sleep quality data an optimum sleep pattern for the user. The method further includes providing direction to the user prior to, during, or any combination thereof one or more second sleep sessions to encourage the user to sleep in the optimum sleep pattern. The method also includes presenting a dashboard for the user that communicates how the optimum sleep pattern and the providing the direction have affected sleep.

Abstract: A grilling structure that has at least one slidable drawer for burning solid fuel for cooking, and a plurality of gas burner tubes are located under the slidable drawer for cooking with gas. Both the slidable drawer and gas burner tubes are beneath the same cooking surface of the grill body. The slidable drawer includes a plurality of passages therethrough that are substantially vertically positioned above the plurality of burner tubes when the slidable drawer is slid into the grill body such that debris which falls through the passages of the slidable drawer does not substantially impact the plurality of gas burner tubes. The grill body can include an ash collection drawer in its base to catch debris, such as ash and food drippings, and the slidable drawer can have an extendable shield that extends under it as the slidable drawer is pulled outwardly from the grill base.

Abstract: In some example pliable air duct systems, inflatable ducts of various diameters and lengths are created by selectively assembling pre-existing stock pieces in different combinations. In some examples, the stock pieces include disconnectable longitudinal joints and disconnectable circumferential joints, wherein the longitudinal joints enable interconnecting multiple stock pieces to achieve a desired tube diameter, and the circumferential joints allow connecting multiple tube segments end-to-end to produce an air duct assembly of a desired length. To control the volume and/or the direction of air discharged from the duct, the duct assembly, in some examples, includes an adjustable register comprising a movable pliable sheet that overlies a discharge opening in a pliable sidewall of the duct. In some examples, the inflatable duct includes one or more cutout patterns on the duct's sidewall to provide guidance in creating a sidewall discharge opening of a proper size and location.

Abstract: In some example pliable air duct systems, inflatable ducts of various diameters and lengths are created by selectively assembling pre-existing stock pieces in different combinations. In some examples, the stock pieces include disconnectable longitudinal joints and disconnectable circumferential joints, wherein the longitudinal joints enable interconnecting multiple stock pieces to achieve a desired tube diameter, and the circumferential joints allow connecting multiple tube segments end-to-end to produce an air duct assembly of a desired length. To control the volume and/or the direction of air discharged from the duct, the duct assembly, in some examples, includes an adjustable register comprising a movable pliable sheet that overlies a discharge opening in a pliable sidewall of the duct. In some examples, the inflatable duct includes one or more cutout patterns on the duct's sidewall to provide guidance in creating a sidewall discharge opening of a proper size and location.

Abstract: The invention includes methods of forming openings extending through electrically insulative layers to electrically conductive materials. In an exemplary aspect, a substrate is provided which supports a stack and an electrical node. The stack comprises an electrically insulative cap over an electrically conductive material. An electrically insulative layer is formed over the stack and over the electrical node. A first etch is utilized to etch through the electrically insulative layer to the electrical node and to the electrically insulative cap. The first etch etches partially into the electrically insulative cap but does not etch entirely through the electrically insulative cap. A second etch is utilized after the first etch to etch entirely through the electrically insulative cap to the electrically conductive material of the stack.

Abstract: A process for forming a semiconductor device comprises the steps of providing a semiconductor substrate assembly comprising a semiconductor wafer having an active area formed therein, a plurality of transistor gates each having a TEOS cap thereon and a pair of nitride spacers along each gate, a plurality of conductive plugs each contacting the wafer, and a BPSG layer overlying the transistor gates and contacting the active area. A portion of the BPSG layer is etched thereby exposing the TEOS caps. A portion of the BPSG layer remains on the active area after completion of the etch. Subsequently, a portion of the TEOS caps are removed to expose the transistor gates and a titanium silicide layer is formed simultaneously to contact the transistor gates and the plugs. An inventive structure resulting from the inventive process is also described.

Abstract: A dielectric is formed over a node location on a semiconductor substrate. The dielectric comprises an insulative material over the node location, an insulative polish stop layer over the insulative material, and an insulator layer over the insulative polish stop layer. A contact opening is formed into the insulator layer, the insulative polish stop layer and the insulative material to proximate the node location. A conductive material is deposited over the insulator layer and to within the contact opening. The conductive material and the insulator layer are polished to at least a portion of the insulative polish stop layer. In one implementation and prior to depositing the conductive material, at least a portion of the contact opening is widened with an etching chemistry that is selective to widen it within the insulative material to a degree greater than any widening of the contact opening within the insulative polish stop layer.

Abstract: A dielectric is formed over a node location on a semiconductor substrate. The dielectric comprises an insulative material over the node location, an insulative polish stop layer over the insulative material, and an insulator layer over the insulative polish stop layer. A contact opening is formed into the insulator layer, the insulative polish stop layer and the insulative material to proximate the node location. A conductive material is deposited over the insulator layer and to within the contact opening. The conductive material and the insulator layer are polished to at least a portion of the insulative polish stop layer. In one implementation and prior to depositing the conductive material, at least a portion of the contact opening is widened with an etching chemistry that is selective to widen it within the insulative material to a degree greater than any widening of the contact opening within the insulative polish stop layer.

Abstract: The invention includes methods of forming openings extending through electrically insulative layers to electrically conductive materials. In an exemplary aspect, a substrate is provided which supports a stack and an electrical node. The stack comprises an electrically insulative cap over an electrically conductive material. An electrically insulative layer is formed over the stack and over the electrical node. A first etch is utilized to etch through the electrically insulative layer to the electrical node and to the electrically insulative cap. The first etch etches partially into the electrically insulative cap but does not etch entirely through the electrically insulative cap. A second etch is utilized after the first etch to etch entirely through the electrically insulative cap to the electrically conductive material of the stack.

Abstract: A container capacitor and method having an internal concentric fin. In one embodiment, the finned capacitor is a stacked container capacitor in a dynamic random access memory circuit. The finned container capacitor provides a high storage capacitance without increasing the size of the cell. The capacitor fabrication requires only two depositions, a spacer etch and a wet etch step in addition to conventional container capacitor fabrication steps.

Abstract: A container capacitor and method having an internal concentric fin. In one embodiment, the finned capacitor is a stacked container capacitor in a dynamic random access memory circuit. The finned container capacitor provides a high storage capacitance without increasing the size of the cell. The capacitor fabrication requires only two depositions, a spacer etch and a wet etch step in addition to conventional container capacitor fabrication steps.