Abstract: Negative photoresist materials are provided that are sensitive in the deep ultraviolet (UV) light range of about 200 nm-300 nm. These materials permit higher resolution then those sensitive to longer wavelengths and thus a higher information density in the microcircuits manufactured using them. This sensitivity in the deep UV is obtained without loss of the other normal attributes of a resist material: good adhesion to substrates, good contrast in images formed, and good etch resistance properties.The polymeric negative photoresist molecules are the homopolymers of N-benzyl acrylamide and its analogues of the general structure ##STR1## where R=alkyl, aryl, halogen, or nitrogen, and copolymers thereof with at least one vinylidene monomer of the general formula ##STR2## wherein R.sub.2 and R.sub.

Abstract: There is provided a flocculating process, especially for clay-water suspensions, in which high molecular weight polymers of N-loweralkyl substituted acrylamides and methacrylamides are used as flocculating agent. There are also provided novel polymeric flocculating agents which have the property of exhibiting a critical flocculation temperature, below which they will cause flocculation of suspended solids but above which they are ineffective as flocculants.