Abstract: A mopper and a cleaning handle are provided. The mopper includes a cleaning pad and a cleaning handle. The cleaning pad includes a pad body and a first connector disposed on the pad body. The cleaning handle includes a handle body, a second connector, and a slider. The second connector is connected to a first end of the handle body and configured to be fitted with the first connector in a concave-convex manner. The slider is movably sleeved outside the handle body, and the slider is configured to, in a situation that the first connector and the second connector are fitted together in the concave-convex manner, move towards the first end along a lengthwise direction of the handle body to drive the first connector to be separated from the second connector. The mopper is simple in structure, and is easy in use.

Abstract: An apparatus is provided that includes an array including n rows and m columns of nodes, each row of nodes coupled to one of n first conductive lines, each column of nodes coupled to one of m second conductive lines, each node of the n rows and m columns of nodes including a spin orbit torque MRAM non-volatile memory cell configured to store a corresponding weight of an n×m array of weights each having a first weight value or a second weight value, and a control circuit configured to apply n input voltages each having a first input value or a second input value to corresponding n first conductive lines, the n input voltages corresponding to an n-element input vector. The spin orbit torque MRAM non-volatile memory cells are configured to generate m output currents at the m second conductive lines upon application of the n input voltages. The m output currents corresponding to a result of multiplying the input vector by the n×m array of weights.

Abstract: A mopper and a cleaning handle are provided. The mopper includes a cleaning pad and a cleaning handle. The cleaning pad includes a pad body and a first connector disposed on the pad body. The cleaning handle includes a handle body, a second connector, and a slider. The second connector is connected to a first end of the handle body and configured to be fitted with the first connector in a concave-convex manner. The slider is movably sleeved outside the handle body, and the slider is configured to, in a situation that the first connector and the second connector are fitted together in the concave-convex manner, move towards the first end along a lengthwise direction of the handle body to drive the first connector to be separated from the second connector. The mopper is simple in structure, and is easy in use.

Abstract: This disclosure describes a test prediction service for predicting needed resources and associated costs for testing projects related to testing of new programs, services, etc., within a service provider network. The test prediction service uses a first machine learning model for predicting “hard costs” using data from a first data source that includes end-to-end test details such as associated resource and infrastructure use (costs) of the service provider network during previous end-to-end testing projects. A second machine learning model is used for predicting “soft costs” using data from a second data source that includes data, e.g., engineering headcount/hours spent developing the end-to-end testing and/or during previous end-to-end testing. The data is used to train the machine learning models. The test prediction service uses the trained machine learning models to generate estimated testing costs of new testing projects when a user enters project attributes for a new testing project.

Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.

Abstract: An apparatus is provided that includes an array including m rows and n columns of nodes. Each column of nodes is coupled to one of n first conductive lines, and each row of nodes is coupled to one of m second conductive lines. Each node of the m rows and n columns of nodes includes a spin orbit torque-based spin torque oscillator circuit configured to oscillate at a corresponding intrinsic frequency. The spin orbit torque-based spin torque oscillator circuits are configured to generate m output signals at the m second conductive lines upon application of n input signals to corresponding n first conductive lines. The n input signals correspond to an n-element input vector, and each input signal includes a corresponding input signal frequency. Each of the m output signals include frequency domain components at the input signal frequencies.

Abstract: An apparatus is provided that includes an array including m rows and n columns of nodes. Each column of nodes is coupled to one of n first conductive lines, and each row of nodes is coupled to one of m second conductive lines. Each node of the m rows and n columns of nodes includes a spin orbit torque-based spin torque oscillator circuit configured to oscillate at a corresponding intrinsic frequency. The spin orbit torque-based spin torque oscillator circuits are configured to generate m output signals at the m second conductive lines upon application of n input signals to corresponding n first conductive lines. The n input signals correspond to an n-element input vector, and each input signal includes a corresponding input signal frequency. Each of the m output signals include frequency domain components at the input signal frequencies.

Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the spin torque oscillator stack.

Abstract: An apparatus is provided that includes a magnetic tunnel junction, a magnetic assist layer coupled to the magnetic tunnel junction, a non-magnetic layer disposed between the free layer and the magnetic assist layer, and a spin Hall effect layer coupled to the magnetic assist layer. The magnetic tunnel junction includes a free layer in a plane, the free layer including a switchable magnetization direction perpendicular to the plane. The magnetic assist layer includes a magnetization direction parallel to the plane and free to rotate about an axis perpendicular to the plane.

Abstract: An apparatus is provided that includes a magnetic tunnel junction, a magnetic assist layer coupled to the magnetic tunnel junction, a non-magnetic layer disposed between the free layer and the magnetic assist layer, and a spin Hall effect layer coupled to the magnetic assist layer. The magnetic tunnel junction includes a free layer in a plane, the free layer including a switchable magnetization direction perpendicular to the plane. The magnetic assist layer includes a magnetization direction parallel to the plane and free to rotate about an axis perpendicular to the plane.

Abstract: An apparatus is provided that includes an array including n rows and m columns of nodes, each row of nodes coupled to one of n first conductive lines, each column of nodes coupled to one of m second conductive lines, each node of the n rows and m columns of nodes including a spin orbit torque MRAM non-volatile memory cell configured to store a corresponding weight of an n×m array of weights each having a first weight value or a second weight value, and a control circuit configured to apply n input voltages each having a first input value or a second input value to corresponding n first conductive lines, the n input voltages corresponding to an n-element input vector. The spin orbit torque MRAM non-volatile memory cells are configured to generate m output currents at the m second conductive lines upon application of the n input voltages. The m output currents corresponding to a result of multiplying the input vector by the n×m array of weights.

Abstract: A smart electrical plug supports one or more electrical outlets and one or more universal serial bus (USB) outlets for charging electrical devices. Electrical power consumed through the one or more electrical outlets may be measured individually or in combination and reported via a wireless communication channel. The smart electrical plug may be implemented by a plurality of printed circuit board assemblies and distributed within a housing to reduce the effects of heat dissipation. The smart electrical plug may further reduce heat dissipation by utilizing one or more electrical circuit approaches.

Abstract: A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.

Abstract: A magnetic head includes a main pole configured to serve as a first electrode, an upper pole containing a trailing magnetic shield configured to a serve as a second electrode, and an electrically conductive portion located in a trailing gap between the main pole and the trailing magnetic shield. The electrically conductive portion is not part of a spin torque oscillator stack, and the electrically conductive portion includes at least one electrically conductive, non-magnetic material layer. The main pole and the trailing magnetic shield are electrically shorted by the electrically conductive portion across the trailing gap between the main pole and the trailing magnetic shield such that an electrically conductive path is present between the main pole and the trailing magnetic shield through the electrically conductive portion.

Abstract: A magnetic head includes a main pole configured to serve as a first electrode, an upper pole containing a trailing magnetic shield configured to a serve as a second electrode, and a record element located in a trailing gap between the main pole and the trailing magnetic shield. The record element includes an electrically conductive, non-magnetic material portion which is not part of a spin torque oscillator stack. The main pole and the trailing magnetic shield are electrically shorted by the record element across the trailing gap between the main pole and the trailing magnetic shield such that an electrically conductive path is present between the main pole and the trailing magnetic shield through the record element.

Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a first magnetic assist layer, a second magnetic assist layer, an antiferromagnetic coupling spacer layer located between the first and second magnetic assist layers, and a first nonmagnetic spacer layer located between the free layer and the first magnetic assist layer. The antiferromagnetic coupling spacer layer is configured to provide antiferromagnetic coupling between a first magnetization direction of the first magnetic assist layer and a second magnetization direction of the second magnetic assist layer.

Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the a spin torque oscillator stack.

Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.

Abstract: A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.

Abstract: A method and system for interconnecting multiple distributed components in a communication network is provided. The design includes a multiple order cross connection fabric employed to interconnect multiple orders of data with at least one distributed component in the communication network. The design may further include at least one order of path termination and adaptation connection, where the at least one order of path termination and adaptation connection providing an interface between the multiple order cross connection fabric and a data management system. The design may be implemented in a SONET/SDH environment.