Abstract: A window assembly comprising: a frame defining an opening; a ceramic window; wherein the frame is bonded to the ceramic window to substantially cover the opening; and wherein the frame comprises two portions, wherein the thickness of a first portion of the two portions in the direction perpendicular to the main plane of the opening is smaller than the thickness of a second of the two portions in the direction perpendicular to the plane of the opening.

Abstract: A ceramic window assembly, comprising a ceramic window, a mount bonded to the ceramic window and comprising an asymmetry; and a superstructure, wherein the superstructure is mechanically stressed.

Abstract: The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer. The semiconductor-on-diamond-on-carrier wafer comprises: a semiconductor-on-diamond wafer having a diamond side and semiconductor side; a carrier substrate disposed on the diamond side of the semiconductor-on-diamond wafer and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer disposed between the diamond side of the semiconductor-on-diamond wafer and the carrier substrate to bond the carrier substrate to the semiconductor-on-diamond wafer. The semiconductor-on-diamond-on-carrier substrate wafer has the following characteristics: a total thickness variation of no more than 40 ?m; a wafer bow of no more than 100 ?m; and a wafer warp of no more than 40 ?m.

Abstract: The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer. The semiconductor-on-diamond-on-carrier wafer comprises: a semiconductor-on-diamond wafer having a diamond side and semiconductor side; a carrier substrate disposed on the diamond side of the semiconductor-on-diamond wafer and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer disposed between the diamond side of the semiconductor-on-diamond wafer and the carrier substrate to bond the carrier substrate to the semiconductor-on-diamond wafer. The semiconductor-on-diamond-on-carrier substrate wafer has the following characteristics: a total thickness variation of no more than 40 ?m; a wafer bow of no more than 100 ?m; and a wafer warp of no more than 40 ?m.

Abstract: The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer (55). The semiconductor-on-diamond-on-carrier wafer (55) comprises: a semiconductor-on-diamond wafer (40) having a diamond side and semiconductor side; a carrier substrate (50) disposed on the diamond side of the semiconductor-on-diamond wafer (40) and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer (48) disposed between the diamond side of the semiconductor-on-diamond wafer (40) and the carrier substrate (50) to bond the carrier substrate (50) to the semiconductor-on-diamond wafer (40). The semiconductor-on-diamond-on-carrier substrate wafer (55) has the following characteristics: a total thickness variation of no more than 40 ?m; a wafer bow of no more than 100 ?m; and a wafer warp of no more than 40 ?m.