Patents by Inventor Michael Ian Pearson

Michael Ian Pearson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11404300
    Abstract: The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer. The semiconductor-on-diamond-on-carrier wafer comprises: a semiconductor-on-diamond wafer having a diamond side and semiconductor side; a carrier substrate disposed on the diamond side of the semiconductor-on-diamond wafer and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer disposed between the diamond side of the semiconductor-on-diamond wafer and the carrier substrate to bond the carrier substrate to the semiconductor-on-diamond wafer. The semiconductor-on-diamond-on-carrier substrate wafer has the following characteristics: a total thickness variation of no more than 40 ?m; a wafer bow of no more than 100 ?m; and a wafer warp of no more than 40 ?m.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: August 2, 2022
    Inventors: Daniel Francis, Frank Yantis Lowe, Michael Ian Pearson
  • Publication number: 20200227301
    Abstract: The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer. The semiconductor-on-diamond-on-carrier wafer comprises: a semiconductor-on-diamond wafer having a diamond side and semiconductor side; a carrier substrate disposed on the diamond side of the semiconductor-on-diamond wafer and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer disposed between the diamond side of the semiconductor-on-diamond wafer and the carrier substrate to bond the carrier substrate to the semiconductor-on-diamond wafer. The semiconductor-on-diamond-on-carrier substrate wafer has the following characteristics: a total thickness variation of no more than 40 ?m; a wafer bow of no more than 100 ?m; and a wafer warp of no more than 40 ?m.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 16, 2020
    Applicant: RFHIC Corporation
    Inventors: Daniel Francis, Frank Yantis Lowe, Michael Ian Pearson
  • Publication number: 20180315637
    Abstract: The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer (55). The semiconductor-on-diamond-on-carrier wafer (55) comprises: a semiconductor-on-diamond wafer (40) having a diamond side and semiconductor side; a carrier substrate (50) disposed on the diamond side of the semiconductor-on-diamond wafer (40) and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer (48) disposed between the diamond side of the semiconductor-on-diamond wafer (40) and the carrier substrate (50) to bond the carrier substrate (50) to the semiconductor-on-diamond wafer (40). The semiconductor-on-diamond-on-carrier substrate wafer (55) has the following characteristics: a total thickness variation of no more than 40 ?m; a wafer bow of no more than 100 ?m; and a wafer warp of no more than 40 ?m.
    Type: Application
    Filed: November 10, 2016
    Publication date: November 1, 2018
    Applicant: RFHIC Corporation
    Inventors: Daniel Francis, Frank Yantis Lowe, Michael Ian Pearson