Patents by Inventor Michael Ira Current

Michael Ira Current has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-contact etch annealing of strained layers
    Patent number: 8187377
    Abstract: The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.
    Type: Grant
    Filed: October 4, 2002
    Date of Patent: May 29, 2012
    Assignee: Silicon Genesis Corporation
    Inventors: Igor J. Malik, Sien G. Kang, Martin Fuerfanger, Harry Kirk, Ariel Flat, Michael Ira Current, Philip James Ong
  • Non-contact etch annealing of strained layers
    Publication number: 20040067644
    Abstract: The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.
    Type: Application
    Filed: October 4, 2002
    Publication date: April 8, 2004
    Inventors: Igor J. Malik, Sien G. Kang, Martin Fuerfanger, Harry Kirk, Ariel Flat, Michael Ira Current, Philip James Ong