Abstract: Radiation-emitting semiconductor diodes are used inter alia in information processing systems as diode lasers or LEDs. Such a radiation-emitting semiconductor diode including an active layer situated between two cladding layers, which layers each include a mixed crystal of III-V semiconductor materials, atoms of different elements, often having a certain degree of ordering, being present on at least one sublattice. An example is an InGaP/InAlGaP diode laser which emits at 670 nm and is highly suitable for various applications. There is a particular demand for diodes which have a high maximum operating temperature at a given wavelength. According to the invention, the composition of the semiconductor material of the active layer is so chosen that this layer has a compression strain, while the atoms of the different elements have a less orderly distribution at least in the semiconductor material of the active layer.