Abstract: A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.

Abstract: A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near-Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.

Abstract: A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.

Abstract: A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.

Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.

Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.

Abstract: An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.

Abstract: An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.

Abstract: A light emitting diode is disclosed that includes a transparent (and potentially low conductivity) silicon carbide substrate, an active structure formed from the Group III nitride material system on the silicon carbide substrate, and respective ohmic contacts on the top side of the diode. The silicon carbide substrate is beveled with respect to the interface between the silicon carbide and the Group III nitride.

Abstract: A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.

Abstract: A method of forming electronic device precursors and devices with reduced cracking in relevant layers is disclosed along with resulting structures. The method includes the steps of growing a transition layer of undoped Group III nitride on a substrate that is other than a Group III nitride, growing an active structure of Group III nitride on the undoped layer, and removing the substrate from the undoped layer.

Abstract: A light emitting diode is disclosed that includes a transparent substrate with an absorption coefficient less than 4 per centimeter, epitaxial layers having absorption coefficients of less than 500 per centimeter in the layers other than the active emission layers, an ohmic contact and metallization layer on at least one of the epitaxial layers, with the ohmic contact and metallization layer having a transmission of at least about 80 percent, and bond pads with reflectivity greater than at least about 70 percent.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: A light emitting diode lamp is disclosed that includes a resin package that defines a recess in the shape of a solid polygon or another three-dimensional solid. The recess includes a floor, two side walls along the respective longer sides of the floor, and two end walls along the respective shorter sides of the floor. The two side walls define an angle therebetween greater than 3°, and the two end walls define an angle therebetween greater than 40°. A light emitting diode chip is positioned on the rectangular floor of the package.

Abstract: A light emitting diode is disclosed that includes a growth substrate, a substantially transparent ohmic contact on a first surface of the growth substrate, a Group III nitride, light-emitting active region on a second surface of the growth substrate, a p-type Group III nitride contact layer on the active region that transmits light generated in the active region, and a substantially transparent ohmic contact on the p-type contact layer.

Abstract: A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near-Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.

Abstract: A rotary resistor or rheostat used in hearing aids worn behind the ear. Such an application necessitates a small, compact arrangement. The arrangement is provided with a supporting surface acting as a substrate with the prerequisite conductors or resistances applied to the support surface.