Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed towards techniques to provide structural integrity for a memory device comprising a memory array. In one embodiment, the device may comprise a memory array having at least a plurality of wordlines disposed in a memory region of a die, and a first fill layer deposited between adjacent wordlines of the plurality of wordlines in the memory region, to provide structural integrity for the memory array. At least a portion of a periphery region of the die adjacent to the memory region may be substantially filled with a second fill layer that is different than the first fill layer. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed towards techniques to provide structural integrity for a memory device comprising a memory array. In one embodiment, the device may comprise a memory array having at least a plurality of wordlines disposed in a memory region of a die, and a first fill layer deposited between adjacent wordlines of the plurality of wordlines in the memory region, to provide structural integrity for the memory array. At least a portion of a periphery region of the die adjacent to the memory region may be substantially filled with a second fill layer that is different than the first fill layer. Other embodiments may be described and/or claimed.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.