Abstract: The present invention relates to novel Amido-Substituted Heterocycle Compounds of Formula (I): and pharmaceutically acceptable salts thereof, wherein R1, R2, R3, R4, R7, and R8 are as defined herein. The present invention also relates to compositions comprising at least one Amido-Substituted Heterocycle Compound, and methods of using the Amido-Substituted Heterocycle Compounds for treating or preventing a herpesvirus infection in a patient.

Abstract: A method of reducing or limiting tissue adhesion comprises contacting the tissue with an effective amount of a hydrogel composition comprising: 2% to 6% by weight hyaluronan, and 3% to 18% by weight methylcellulose, wherein the combined total amount of hyaluronan and methylcellulose in the hydrogel is between 8 and 24% by weight; and wherein the ratio of hyaluronan:methylcellulose is between 1:1 and 1:5 w/w. The hydrogel composition and may be used to reduce or limit tissue adhesion that is correlated with surgery, and may be used in surgeries wherein the surgery is performed through a small incision or opening.

Abstract: A bioresorbable, sustained release pharmaceutical composition comprising: 1.8 wt % to 3.0 wt % methylcellulose and 0.1 wt % to 3.0 wt % hyaluronan in the form of a gel polymer matrix, and at least one local anesthetic agent, suitably ropivacaine, which may be administered by injection.

Abstract: There is provided an apparatus for cyclical plasma etching of a substrate, the apparatus comprising: a process chamber; a support within the process chamber for receiving the substrate to be etched; a controller for repeatedly applying a dosing step and a bombardment steps respectively; a dosing controller for controlling the flow of a process gas in the dosing step such that the substrate is exposed to a maximum dose of process gas in use of 1000 Langmuirs and said dose is controllable within an accuracy of 1 Langmuir; and a first signal generator coupled to the process chamber and a second signal generator coupled to the support within the process chamber, the first and second signal generators being configured such that in use positions ions of an plasma active species within the process chamber have a substrate bombardment energy in the range of 10 eV to 100 eV which is controllable within an accuracy of 5 eV. There is also provided a method for cyclical plasma etching of a substrate using said apparatus.

Abstract: There is provided an apparatus for cyclical plasma etching of a substrate, the apparatus comprising: a process chamber; a support within the process chamber for receiving the substrate to be etched; a controller for repeatedly applying a dosing step and a bombardment steps respectively; a dosing controller for controlling the flow of a process gas in the dosing step such that the substrate is exposed to a maximum dose of process gas in use of 1000 Langmuirs and said dose is controllable within an accuracy of 1 Langmuir; and a first signal generator coupled to the process chamber and a second signal generator coupled to the support within the process chamber, the first and second signal generators being configured such that in use positions ions of an plasma active species within the process chamber have a substrate bombardment energy in the range of 10 eV to 100 eV which is controllable within an accuracy of 5 eV. There is also provided a method for cyclical plasma etching of a substrate using said apparatus.

Abstract: An apparatus for supporting a workpiece has an enclosure, a means for reducing the pressure and a platen on which the workpiece is mounted. A heating mechanism is located within the platen and the platen is coated with a high emissivity material, which facilitates the radiative heat transfer between the platen and the workpiece. Consequently, the workpiece can be rapidly raised to a specific temperature. This apparatus is particularly applicable to the supporting of a semiconductor wafer within a vacuum system.

Abstract: An apparatus for depositing metal or alloy films by a thermal decomposition process on a substrate includes a furnace having a number of selectively heated zones. The temperature of each zone is controllable so as to provide compensation for changes in the concentration of reactant materials in the different regions of the furnace. Means are provided for the safe handling of highly pyrophoric organometallic reactants. The apparatus may be used for the deposition of aluminium/silicon alloy films on semiconductor wafers in the manufacture of integrated circuits.

Abstract: This invention relates to a method for the production of gases free from particulate contaminants, for use in driving gas turbines without causing fouling or corrosion of the blading.The method comprises feeding a gas contaminated with particulate material, for instance produced by the combustion or gasification of coal, and a tackifying material, such as a crackable hydrocarbon or an inorganic compound, to a collection medium, preferably a fluidized particle bed, maintained at a temperature whereat the tackifying material becomes sticky and is deposited on the collection medium. The contaminants are removed by becoming stuck thereon.