Abstract: A process for using selectively deposited tungsten in the making of ohmic contacts and contact/interconnect metallization patterns. In one form the process is employed to interconnect fully formed field effect devices using contacts through the dielectric layer. A thin layer of intrinsic polysilicon or amorphous silicon is conformally deposited, patterned and covered by selectively deposited tungsten, An anneal operation then forms self-aligned contacts or shunts, between the tungsten layer and the source/drain type diffusions exposed during the contact cut, by updiffusion through the thin intrinsic silicon, or by conversion of the thin intrinsic silicon to tungsten.

Abstract: A liquid crystal display system having improved temperature compensation using multiple capacitance ratios for different display temperature ranges. The capacitance of a liquid crystal display segment is measured when preconditioned to a first voltage below the threshold voltage and when preconditioned to a second voltage above the threshold voltage. Separate embodiments are disclosed which sequentially measure the capacitance of a single segment or which simultaneously measures the capacitance of two segments. The magnitude of the second voltage is adjusted to converge the ratio of the measured capacitances to a predetermined value selected according to the display temperature. The on segment and off segment voltages are then formed based on fixed percentages of this second voltage.

Abstract: A data processing system is disclosed having data processing means for providing data in either an encoded format or in a display format in respective first and second operating modes. Data display means responsive to the operating mode of the data processing means are provided for receiving the data provided thereby, converting any data received in the encoded format to the display format, and displaying all received data in the display format.