Abstract: A varactor is configured with first and second conducting layers, spaced apart from one another such that a given voltage can be applied across the first and second conducting layers. Further, an insulator arrangement includes at least one insulator layer disposed between the first and second conducting layers, configured to cooperate with the first and second conducting layers to produce a charge pool which changes responsive to changes in the given voltage such that a device capacitance value between the first and second conducting layers changes responsive to the given voltage. The insulator arrangement can include one layer, two distinct layers or more than two distinct layers. One or more of the layers can be an amorphous material. A zero-bias voltage version of the varactor is also described.

Abstract: A device including an input port configured to receive an input signal is described. The device also includes an output port and a structure, which structure includes a tunneling junction connected with the input port and the output port. The tunneling junction is configured in a way (i) which provides electrons in a particular energy state within the structure, (ii) which produces surface plasmons in response to the input signal, (iii) which causes the structure to act as a waveguide for directing at least a portion of the surface plasmons along a predetermined path toward the output port such that the surface plasmons so directed interact with the electrons in a particular way, and (iv) which produces at the output port an output signal resulting from the particular interaction between the electrons and the surface plasmons.

Abstract: A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

Abstract: An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron tunneling device, which includes first and second non-insulating layers spaced apart from one another such that a given voltage can be provided thereacross. The integrated electron tunneling device further includes an arrangement disposed between the first and second non-insulating layers and serving as a transport of electrons between and to the first and second non-insulating layers. The arrangement includes at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling. The integrated electron tunneling device further includes an antenna structure connected with the first and second non-insulating layers, and the integrated electron tunneling device is electrically connected with the integrated electronic component.

Abstract: A device including an input port configured to receive an input signal is described. The device also includes an output port and a structure, which structure includes a tunneling junction connected with the input port and the output port. The tunneling junction is configured in a way (i) which provides electrons in a particular energy state within the structure, (ii) which produces surface plasmons in response to the input signal, (iii) which causes the structure to act as a waveguide for directing at least a portion of the surface plasmons along a predetermined path toward the output port such that the surface plasmons so directed interact with the electrons in a particular way, and (iv) which produces at the output port an output signal resulting from the particular interaction between the electrons and the surface plasmons.

Abstract: An assembly includes a first electrical circuitry for providing a first electrical signal containing data and a transmitting arrangement, connected with the first electrical circuitry, for receiving the first electrical signal and for converting the first electrical signal into an electromagnetic signal containing at least a portion of the data. The electromagnetic signal has a carrier frequency greater than 300 GHz. The assembly also includes a receiving arrangement for receiving the electromagnetic signal and for converting the electromagnetic signal into a second electrical signal containing at least some of the portion of the data, and a second electrical circuitry connected with the receiving arrangement and configured for receiving the second electrical signal.

Abstract: An assembly includes a first electrical circuitry for providing a first electrical signal containing data and a transmitting arrangement, connected with the first electrical circuitry, for receiving the first electrical signal and for converting the first electrical signal into an electromagnetic signal containing at least a portion of the data. The electromagnetic signal has a carrier frequency greater than 300 GHz. The assembly also includes a receiving arrangement for receiving the electromagnetic signal and for converting the electromagnetic signal into a second electrical signal containing at least some of the portion of the data, and a second electrical circuitry connected with the receiving arrangement and configured for receiving the second electrical signal.

Abstract: A device including an input port configured to receive an input signal is described. The device also includes an output port and a structure, which structure includes a tunneling junction connected with the input port and the output port. The tunneling junction is configured in a way (i) which provides electrons in a particular energy state within the structure, (ii) which produces surface plasmons in response to the input signal, (iii) which causes the structure to act as a waveguide for directing at least a portion of the surface plasmons along a predetermined path toward the output port such that the surface plasmons so directed interact with the electrons in a particular way, and (iv) which produces at the output port an output signal resulting from the particular interaction between the electrons and the surface plasmons.

Abstract: A device including an input port configured to receive an input signal is described. The device also includes an output port and a structure, which structure includes a tunneling junction connected with the input port and the output port. The tunneling junction is configured in a way (i) which provides electrons in a particular energy state within the structure, (ii) which produces surface plasmons in response to the input signal, (iii) which causes the structure to act as a waveguide for directing at least a portion of the surface plasmons along a predetermined path toward the output port such that the surface plasmons so directed interact with the electrons in a particular way, and (iv) which produces at the output port an output signal resulting from the particular interaction between the electrons and the surface plasmons.

Abstract: An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron tunneling device, which includes first and second non-insulating layers spaced apart from one another such that a given voltage can be provided thereacross. The integrated electron tunneling device further includes an arrangement disposed between the first and second non-insulating layers and serving as a transport of electrons between and to the first and second non-insulating layers. The arrangement includes at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling. The integrated electron tunneling device further includes an antenna structure connected with the first and second non-insulating layers, and the integrated electron tunneling device is electrically connected with the integrated electronic component.

Abstract: A relay for tripping a circuit breaker in a high voltage power line, the relay including a current transformer having first and second turns ratios, a heat radiation circuit including a plurality of lamps connected to the current transformer and a sensing circuit including a phototransistor which responds to heat radiation from one of said lamps, the turns ratios and lamps being selectively connectable to provide different minimum trip current levels of the relay.

Abstract: A temperature sensing transformer primary switch for a distribution transformer, the switch being mounted within the distribution transformer below the level of the dielectric fluid and being manually operable externally of the transformer for opening the primary circuit and deenergizing the transformer, the switch including a temperature sensing device mounted on the internal end of the transformer below the level of the dielectric fluid to open the primary switch in response to overload temperatures produced on the transformer's secondary circuit. The temperature sensing device includes a compression spring and a wax motor for releasing the energy stored in the compression spring as the temperature of the dielectric fluid reaches a predetermined maximum temperature. The spring is preloaded sufficiently by a manual operation to actuate the switch at the maximum temperature. A pressure responsive switch assembly is provided for opening the primary switch.