Patents by Inventor Michael J. Fithian

Michael J. Fithian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5491450
    Abstract: A low power consumption amplifier that is essentially insensitive to the process used to fabricate the active devices of the amplifier employs feedback to minimize variations in electrical characteristics of the devices. For weight-sensitive microwave applications, a high electron mobility transistor (HEMT) or a pseudomorphic high electron mobility transistor (PHEMT) may be selected as an active device for each stage of the amplifier. HEMTs and PHEMTs typically exhibit greater device gain than do MESFETs, especially at the upper portion of X-band and above, so that a HEMT- or PHEMT-based stage of an amplifier where additional overall gain is required, can be achieved without significantly adversely affecting power consumption demands, and attendant electrical energy storage/generation requirements while achieving and/or maintaining an overall flat gain characteristic of the amplifier.
    Type: Grant
    Filed: June 1, 1993
    Date of Patent: February 13, 1996
    Assignee: Martin Marietta Corporation
    Inventors: David R. Helms, Michael J. Fithian
  • Patent number: 5337027
    Abstract: A microwave phase shifter has a plurality of sequentially arranged, independently-actuatable sectiions, the total phase shift is the sum of all of the sections. The phase shifter has a common substrate, supporting several switching elements, with at least one switching element being assigned to each phase section; the switching elements are fastened to the common substrate with the element connections are all substantially in a first plane above the substrate. A first layer of a dielectric material is affixed adjacent to the first plane. Phase shift elements, such as microstriplines of a known length or inductive patterns of conductor, imparting the desired section phase shift, are fabricated upon a surface of the first dielectric layer furthest from the substrate, and are interconnected to and from the sections, or onto or off of the phase shifter at this level.
    Type: Grant
    Filed: December 18, 1992
    Date of Patent: August 9, 1994
    Assignee: General Electric Company
    Inventors: Mooshi R. Namordi, Mark R. Lang, Michael J. Fithian
  • Patent number: 4967258
    Abstract: The present invention provides a structure for use in self-biasing and source bypassing a packaged, field-effect transistor (FET) having first and second leads. The structure is readily assembled and provides an excellent noise figure.
    Type: Grant
    Filed: March 2, 1989
    Date of Patent: October 30, 1990
    Assignee: Ball Corporation
    Inventors: Michael J. Fithian, James E. Foster
  • Patent number: 4724441
    Abstract: A phased array antenna system includes a plurality of active radiating antenna elements each of which is driven by and each of which drives a transceiver module located closely adjacent thereto. Each transceiver module includes a high-power pulse signal-transmitting amplifier powered by a high-capacitance, low current dc rectifier system to minimize charging currents and provide very high pulse currents, and a low-noise amplifier for amplifying the received signal. The modules further include a transmit/receive switch, phase adjusting circuits in the input to the high-power signal-transmitting amplifier and in the output to the low-noise signal-receiving amplifier for normalizing the signal phase, and amplitude limiting means in the input of the low-noise signal receiving amplifier for protecting the low-noise amplifier during the transmit mode.
    Type: Grant
    Filed: May 23, 1986
    Date of Patent: February 9, 1988
    Assignee: Ball Corporation
    Inventors: Michael J. Fithian, Vincent A. Hirsch, Kenneth R. Zurawski, Alvaro Medina