Abstract: Methods and systems for detection of. One method includes receiving light of a predetermined wavelength range from a source, and splitting the received light into multiple components having differing wavelengths. The method further includes directing the components toward individual locations spaced from one another. In addition, this illustrative method includes detecting at least some of the components at the locations. One illustrative system includes a plurality of detectors provided along an image facing plane of an array, wherein each detector has a width less than or equal to that of its conesponding pixel location, wherein at least two detectors are located within a single pixel location, wherein the size of each pixel location is approximately equal to the blur spot or smallest visible spot for the focal plane array, and a plurality of light pipe regions, wherein at least two light pipe regions are located within a single pixel location.

Abstract: Methods and systems for detection of multiple wavelengths of radiation are provided. In accordance with one embodiment, a method is provided for detecting multiple wavelengths of light received within a predetermined wavelength range. The method comprises receiving light of a predetermined wavelength range from a source, and splitting the received light into multiple components having differing wavelengths. The method further comprises directing the components toward individual locations spaced from one another. In addition, this embodiment comprises detecting at least some of the components at the locations.

Abstract: A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.

Abstract: A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.

Abstract: A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.