Abstract: Methods for forming electrical contacts with CdTe layers, methods for forming photovoltaic devices, methods for passivating a CdTe surface, and photovoltaic devices are described.

Abstract: Methods for forming electrical contacts with CdTe layers, methods for forming photovoltaic devices, methods for passivating a CdTe surface, and photovoltaic devices are described.

Abstract: A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.

Abstract: A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.

Abstract: The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Abstract: The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Abstract: A carbon nanotube heat-exchange system (10) and method for producing the same. One embodiment of the carbon nanotube heat-exchange system (10) comprises a microchannel structure (24) having an inlet end (30) and an outlet end (32), the inlet end (30) providing a cooling fluid into the microchannel structure (24) and the outlet end (32) discharging the cooling fluid from the microchannel structure (24). At least one flow path (28) is defined in the microchannel structure (24), fluidically connecting the inlet end (30) to the outlet end (32) of the microchannel structure (24). A carbon nanotube structure (26) is provided in thermal contact with the microchannel structure (24), the carbon nanotube structure (26) receiving heat from the cooling fluid in the microchannel structure (24) and dissipating the heat into an external medium (19).

Abstract: The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Abstract: The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Abstract: The present invention discloses a carbon nanotube (SWNT)-polymer composite actuator and method to make such actuator. A series of uniform composites was prepared by dispersing purified single wall nanotubes with varying weight percents into a polymer matrix, followed by solution casting. The resulting nanotube-polymer composite was then successfully used to form a nanotube polymer actuator.

Abstract: Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

Abstract: A carbon nanotube heat-exchange system (10) and method for producing the same. One embodiment of the carbon nanotube heat-exchange system (10) comprises a microchannel structure (24) having an inlet end (30) and an outlet end (32), the inlet end (30) providing a cooling fluid into the microchannel structure (24) and the outlet end (32) discharging the cooling fluid from the microchannel structure (24). At least one flow path (28) is defined in the microchannel structure (24), fluidically connecting the inlet end (30) to the outlet end (32) of the microchannel structure (24). A carbon nanotube structure (26) is provided in thermal contact with the microchannel structure (24), the carbon nanotube structure (26) receiving heat from the cooling fluid in the microchannel structure (24) and dissipating the heat into an external medium (19).

Abstract: Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

Abstract: The invention relates to a chemical vapor deposition (“CVD”) process for the growth of single-wall carbon nanotube (“SWNT”). According to the invention, methane gas is decomposed in the presence of a supported iron-containing catalyst to grow SWNT material within a growth temperature range from about 670° C. to about 800° C. The process provides higher yields of SWNT material and reduces the formation of amorphous carbon. Thus, the SWNT material produced according to the invention will minimize problems associated with purification steps, such as breakage or damage to the SWNT material. The invention provides for the manufacture of SWNT material at lower temperatures, which not only results in lower equipment and processing costs, but also provides compatibility with substrates that cannot be used at higher temperatures. The invention may be used to provide an inexpensive process for the mass production of SWNT material.

Abstract: A method of processing single-walled carbon nanotubes (SWNTs) in the formation of superbundles or for use in hydrogen storage, or both, is provided comprising the steps of mixing a SWNT substrate in a solvent solution into a suspension, and agitating the suspension using an ultrasonic energy means.

Abstract: Highly purified single-wall carbon nanotubes (SWNTs) and production thereof. The highly purified single-wall carbon nanotubes may be produced according to one embodiment of the invention by generating a crude SWNT material having a carbon nanotube fraction and a non-nanotube carbon fraction, refluxing the crude SWNT material in an acid solution to redistribute the non-nanotube carbon fraction as a uniform carbon coating on the carbon nanotube fraction, and oxidizing the refluxed SWNT material to remove the uniform carbon coating formed thereon. Preferably, metal is also removed during reflux.