Abstract: A top surface imaging technique for top pole tip width control in a magnetoresistive (“MR”) or giant magnetoresistive (“GMR”) read/write head is disclosed in which a multi-layer structure is employed to define the thick photoresist during processing resulting in much improved dimensional control. To this end, a relatively thin upper photoresist layer is patterned with much improved resolution, an intermediate metal or ceramic layer is then defined utilizing the upper photoresist layer as a reactive ion etching (“RIE”) mask, with the intermediate layer then being used as an etching mask to define the bottom-most thick photoresist layer in a second RIE process. As a consequence, a much improved sub-micron pole tip width along with a high aspect ratio and vertical profile is provided together with much improved critical dimension control.

Abstract: A top surface imaging technique for top pole tip width control in a magnetoresistive ("MR") or giant magnetoresistive ("GMR") read/write head is disclosed in which a multi-layer structure is employed to define the thick photoresist during processing resulting in much improved dimensional control. To this end, a relatively thin upper photoresist layer is patterned with much improved resolution, an intermediate metal or ceramic layer is then defined utilizing the upper photoresist layer as a reactive ion etching ("RIE") mask, with the intermediate layer then being used as an etching mask to define the bottom-most thick photoresist layer in a second RIE process. As a consequence, a much improved sub-micron pole tip width along with a high aspect ratio and vertical profile is provided together with much improved critical dimension control.

Abstract: A process for making a magnetic head including the steps of forming a first pole piece comprising magnetic material and depositing a gap-forming layer comprising nonmagnetic material over the first pole piece. A first patterned layer of uncrosslinked polymer is formed on the gap-forming layer. The first patterned layer is cured by electron irradiation at a temperature less than about 175 C. to crosslink the polymer. A conductive coil is formed on the cured first patterned layer and a second patterned layer of uncrosslinked polymer is formed over the conductive coil. The second patterned layer is cured by electron irradiation at a temperature less than about 175 C. to crosslink the polymer. A second pole piece layer of magnetic material is formed to complete the magnetic head.

Abstract: A process for making a magnetic head including the steps of forming a first pole piece comprising magnetic material and depositing a gap-forming layer comprising nonmagnetic material over the first pole piece. A first patterned layer of uncrosslinked polymer is formed on the gap-forming layer. The first patterned layer is cured by electron irradiation at a temperature less than about 175 C. to crosslink the polymer. A conductive coil is formed on the cured first patterned layer and a second patterned layer of uncrosslinked polymer is formed over the conductive coil. The second patterned layer is cured by electron irradiation at a temperature less than about 175 C. to crosslink the polymer. A second pole piece layer of magnetic material is formed to complete the magnetic head.

Abstract: A method for forming a re-entrant photoresist lift-off profile for thin film device processing of particular utility in conjunction with self-aligned sputtered films, such as permanent magnet ("PM") films, for use in magnetoresistive ("MR") read heads as well as a device made thereby. Photoresist is patterned in a conventional manner upon the thin film layers overlying a suitable substrate and the photoresist is then exposed to a suitable developer resulting in photoresist regions having substantially vertical sidewalls. An electron beam, or other suitable energy source, is then utilized to cross-link (or render relatively insoluble) the upper portion of the positive tone resist image by accelerating a sufficient dose of electrons into the photoresist to a well controlled depth. A second electron beam is then distributed throughout the entire photoresist thickness to render the lower portion of it relatively more soluble in a developer.