Abstract: A method of forming a multi-layered dual-polysilicon structure that forms a polysilicon gate prior to formation of an ion implantation barrier and that requires fewer steps, is more economical, and permits fabrication of more compact semiconductor circuits and devices than prior art methods.

Abstract: Various embodiments of a wiper assembly are disclosed which facilitate the removal by complete release or shattering of a frozen mass of ice or snow which has become merely trapped beneath a wiper blade during its movement. In particular, there is described a method and structures for removing such frozen masses by vibrating a wiper blade at high intensity of vibration. The vibrational intensity is normally measured when no frozen masses are present and causes at least parts of the wiper blade to move out of contact with the windshield.

Abstract: The capabilities of a cryptographic module are controlled by a crypto configuration control (CCC) register that is initialized by one or more self-signed commands that are preformulated and signed with the digital signature key of the crypto module itself. The crypto module accepts a self-signed command only if the self-signature can be validated using the signature verification key of the module. In one implementation, the final configuration is determined by a single self-signed command. In another implementation, a first self-signed command is used to create an temporary configuration that allows one or more initialization authorities to issue additional commands fixing the final configuration. The self-signed commands are maintained separately from the crypto module and are distributed to the end user either physically or electronically.

Abstract: Various embodiments of a wiper assembly are disclosed which facilitate the removal or shattering of ice or snow debris lodged and trapped beneath a wiper blade during its movement. Embodiments of the invention are disclosed which provide means to overcome normal urging forces of the wiper arm in a direction toward a light transmitting screen member and to urge the wiper arm of the wiper assembly away from the surface of the screen member. Some structures according to the invention may cause the wiper blade to return with an impact force sufficient ice and snow debris trapped beneath the wiper blade and also possibly frozen to it. Other embodiments include means for imparting vibrational movement to the wiper assembly to release or shatter ice and snow trapped beneath the blade or frozen to it.

Abstract: An extendible leg protector which includes a lower protective portion for the foot and shin, an upper protective portion for the knee, and two adjustable portions which extend from the lower and upper protective portions, respectively. The adjustable portions are adapted to mate together in a manner that the total length of the protector can be varied.

Abstract: A product for use in creating sculpted shapes and features comprises a dry quantity of granular sand which is treated to retain its cohesiveness when submerged in water. A compressible receptacle contains the granular sand in a hollow interior thereof, and this receptacle includes a longitudinally extending sidewall surrounding the interior, a closure forming an upstream end of the receptacle and a dispensing nozzle disposed at a downstream end. The nozzle has a mouth sized to be larger than the granular size of the sand and in fluid communication with the interior. The sidewall is fabricated from a material having sufficient flexibility to allow the receptacle to be squeezed with enough force to cause a cohesive mass of the sand to be forcibly extruded out of the mouth when the nozzle is immersed within a volume of water.

Abstract: An electronic combination lock is provided with and incorporates the enhanced feature of covert entry detection and notification. Whenever the bolt of an electronic lock provided with this enhancement is retracted to its withdrawn or unlocked position and whenever the lock has not received an authorized combination enabling the movement of the bolt, movement of the bolt is detected and the electronics of the lock is powered for a time sufficient to record an indication of the covert entry in its non-volatile memory. Upon normal operation at a subsequent time, the indication of covert entry is read from the non-volatile memory and a visual indication is displayed to the operator to inform the operator that covert entry has occurred.

Abstract: A method of aligning a multiple transducer magnetic head with respect to a magnetic recording tape. Values related to the offset of each transducer from a reference location are determined, using reference signals on the tape. From these values the amount of compensation required to accurately position any particular transducer with respect to any track can be calculated. By a preferred selection of the reference for one such offset value, and by taking known design of the head into account, simplified processing of the values is possible.

Abstract: A method and system are disclosed for the implementation of a weakened privacy channel. This is achieved through use of a weakened symmetric cryptographic algorithm called commercial data masking. The masked text is created from clear text at one system and may to transported electronically to another system where the masked text may be unmasked to produce the clear text. The reason to use the commercial data masking algorithm for data privacy is that it is exportable to organizations to which products which contain the Data Encryption Algorithm when used for data privacy are not exportable. In addition, a method and system is disclosed by which the key when used for commercial data masking may be transformed into a key that may be used with the Data Encryption Algorithm.

Abstract: A conductive layer is formed beneath a runner in an integrated circuit. The conductive layer is also formed within vias. The conductive layer preserves electrical connection should the runner separate due, perhaps, to electromigration or stress voiding. The conductive layer also provides protection against various failures or defects which may occur in the runner material within the vias.

Abstract: A semiconductor radio-frequency power detector comprises, in a stack, an ohmic contact layer, undoped layer of a first semiconductor material, such as GaAs, of thickness l.sub.1, an undoped layer of a second semiconductor material, such as AlGaAs, of larger band gap than the first semiconductor material, the thickness of the layer being such that transport in the layer is primarily by intraband tunnelling, a second undoped layer of the first semiconductor material of thickness l.sub.2, where l.sub.2 >20l.sub.1, and a second ohmic contact layer. The difference between the thicknesses of the layers of the first semiconductor material gives rise to asymmetry in the current density/applied voltage characteristic for the device. An n+ layer may be incorporated in the second layer of the intrinsic first material to reduce "band bending" and to increase the current density.

Abstract: Semiconductor apparatus comprises a split-gate semiconductor device (1) which has a first layer (3) of a first undoped semiconductor material (e.g. GaAs) and a second layer (4) of a second semiconductor material (e.g. AlGaAs) which is doped through at least part of its thickness. The second material has a higher energy band gap than the first material, and the layers form a heterojunction so that electrons from the second layer collect in the first layer to form a two-dimensional electron gas. Drain and source contacts (7,6) are provided on the second layers, and a gate electrode (8) is so configured that on application of a sufficiently large negative bias to the gate electrode a constriction is formed in the first layer through which only a one-dimensional electron gas can pass between the source and drain contacts. The apparatus also includes a bias supply (17) for applying a bias voltage between the source and drain contacts. The source/drain bias is made equal to or greater than E.sub.f /e where E.sub.

Abstract: A facility for making dynamic changes to a system master key without stopping the system, and without loss of integrity to ongoing cryptographic operations. A version number is generated and associated with the current master key. A dynamic change is made to the master key, resulting in the then current master key becoming the old master key, and a "new" current master key (with a new version number) being placed into operation. Subsequent cryptographic requests using a supplied key enciphered under the old master key are identified by means of a supplied version number associated with the supplied key. This identification triggers a reencipher operation, reenciphering the supplied key under the now current master key--after which the cryptographic operation proceeds. Unique patterns are generated to verify the contents of the master key registers, and to authorize normal use of the cryptographic facility, and issuers of key-change operations.

Abstract: An apparatus and method for scanning the outer profile of control rods in a control rod assembly includes a plurality of rotatably mounted ultrasonic transducers which are mounted for rotation about the axis of at least some of the control rods in the assembly. The assembly is moved in a linear path parallel to the axis of the control rods, past the rotating transducers for scanning the surfaces of the control rods in helical paths. By distributing the transducers in a selected configuration, all control rods in the assembly can eventually be scanned.

Abstract: For use with a raise drill or other earth or rock drills. A seal assembly comprises a housing for the sealing engagement with the walls at the top of the shaft, a flexible, generally cylindrical seal for engagement with a drill rod and an inflatable bladder disposed between the housing and the seal and serving to press the seal into sealing engagement with the drill rod.

Abstract: A method of forming a transistor is disclosed. Conventional fabrication techniques direct an ion implantation beam toward a substrate upon which a gate has already been formed. If the gate stack is too low relative to the incident beam energy, the dopant species may channel thorugh the gate stack, adversely affecting transistor performance. The present invention prevents channeling through this gate by covering the gate with a protective layer before ion implantation.

Abstract: A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Abstract: An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Abstract: A die holder comprises a die housing and a guide bar. The guide bar is designed to be retained within a Jacob's chuck retained within a lathe tailstock, and the die housing is slidably movable along the guide bar. A button die is retained within the die housing and with the guide bar aligned with the bar stock workpiece held by the lathe headstock, the die housing may be brought into engagement with the workpiece so that the button die engages the same. A user may then grasp the die holder while the headstock and workpiece are rotating so as to effect a cutting of threads. A reverse rotation of the headstock will result in a disengagement of the die holder.

Abstract: A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon.