Abstract: An electronic package and method of formation. A thermally conductive layer having first and second opposing surfaces is provided. A first dielectric layer is laminated under pressurization to the first opposing surface of the thermally conductive layer, at a temperature between a minimum temperature T1MIN and a maximum temperature T1MAX. T1MAX constrains the ductility of the first dielectric layer to be at least D1 following the laminating. T1MAX depends on D1 and on a first dielectric material comprised by the first dielectric layer. A second dielectric layer is laminated under pressurization to the second opposing surface of the thermally conductive layer, at a temperature between a minimum temperature T2MIN and a maximum temperature T2MAX. T2MAX constrains the ductility of the second dielectric layer to be at least D2 following the laminating. T2MAX depends on D2 and on a second dielectric material comprised by the second dielectric layer.

Abstract: An electronic package and method of formation. A thermally conductive layer having first and second opposing surfaces is provided. A first dielectric layer is laminated under pressurization to the first opposing surface of the thermally conductive layer, at a temperature between a minimum temperature T1MIN and a maximum temperature T1MAX. T1MAX constrains the ductility of the first dielectric layer to be at least D1 following the laminating. T1MAX depends on D1 and on a first dielectric material comprised by the first dielectric layer. A second dielectric layer is laminated under pressurization to the second opposing surface of the thermally conductive layer, at a temperature between a minimum temperature T2MIN and a maximum temperature T2MAX. T2MAX constrains the ductility of the second dielectric layer to be at least D2 following the laminating. T2MAX depends on D2 and on a second dielectric material comprised by the second dielectric layer.

Abstract: A method and associated structure for increasing the rate at which a chromium volume is etched when the chromium body is contacted by an acid solution such as hydrochloric acid. The etch rate is increased by a metallic or steel body in continuous electrical contact with the chromium volume, both of which are in continuous contact with the acid solution. At a temperature between about 21° C. and about 52° C., and a hydrochloric acid concentration (molarity) between about 1.2 M and about 2.4 M, the etch rate is at least a factor of about two greater than an etch rate that would occur in an absence of the steel body. In one embodiment, the chromium volume is a chromium layer that rests upon a conductive layer that includes a metal such as copper, wherein the acid solution is not in contact with the conductive layer.

Abstract: An electronic package and method of formation. A thermally conductive layer having first and second opposing surfaces is provided. A first dielectric layer is laminated under pressurization to the first opposing surface of the thermally conductive layer, at a temperature between a minimum temperature T1MIN and a maximum temperature T1MAX. T1MAX constrains the ductility of the first dielectric layer to be at least D1 following the laminating. T1MAX depends on D1 and on a first dielectric material comprised by the first dielectric layer. A second dielectric layer is laminated under pressurization to the second opposing surface of the thermally conductive layer, at a temperature between a minimum temperature T2MIN and a maximum temperature T2MAX. T2MAX constrains the ductility of the second dielectric layer to be at least D2 following the laminating. T2MAX depends on D2 and on a second dielectric material comprised by the second dielectric layer.

Abstract: An electronic package and method of making the electronic package is provided. An opening in a thermally conductive member of the electronic package is formed to substantially prevent adhesive which can bleed from under a substrate mounted and secured on the thermally conductive member from contacting a portion of the thermally conductive member upon which an electrical element will be mounted.

Abstract: An integrated circuit chip carrier assembly is provided by joining a substrate having electrically conductive regions on at least one major surface thereof to a stiffener by a bonding film. The bonding film comprises a dielectric substrate having a thermoset adhesive on both of its major surfaces. The thermoset adhesive prior to the bonding is a B-stage adhesive, is tack-free at normal room temperatures and is solvent free.

Abstract: An electrical structure, comprising a first dielectric layer, a patterned layer on the first dielectric layer, and a second dielectric layer on the patterned layer. The patterned layer includes a metal pattern on the first dielectric layer, a metallic pattern on the metal pattern, and a plugged pattern within a remaining space of the patterned layer. The plugged pattern includes a dielectric material. The second dielectric layer is adhesively bonded to a top surface of the patterned layer. The second dielectric layer includes the dielectric material.