Abstract: Embodiments of the invention include photoresist materials and methods of patterning photoresist materials. In an embodiment a photoresist material comprises a plurality of molecular glasses (MGs). In an embodiment, a glass transition temperature Tg of the photoresist material is less than an activation temperature needed to deblock blocking groups from the MGs. Embodiments include a method of patterning a photoresist material that comprises exposing the photoresist material with ultraviolet radiation. The method may also comprise, performing a first post exposure bake at a first temperature, that is less than the activation temperature needed to deblock blocking groups from the MGs, and performing a second post exposure bake at a second temperature that is approximately equal to or greater than the activation temperature needed to deblock blocking groups from the MGs.

Abstract: Embodiments of the invention include microelectronic devices and methods of forming such devices. In an embodiment, a microelectronic device, includes one or more pre-patterned features formed into a interconnect layer, with a conformal barrier layer formed over the first wall, and the second wall of one or more of the pre-patterned features. A photoresist layer may formed over the barrier layer and within one or more of the pre-patterned features and a conductive via may be formed in at least one of the pre-patterned features.

Abstract: Embodiments of the invention include photoresist materials and methods of patterning photoresist materials. In an embodiment a photoresist material comprises a plurality of molecular glasses (MGs). In an embodiment, a glass transition temperature Tg of the photoresist material is less than an activation temperature needed to deblock blocking groups from the MGs. Embodiments include a method of patterning a photoresist material that comprises exposing the photoresist material with ultraviolet radiation. The method may also comprise, performing a first post exposure bake at a first temperature, that is less than the activation temperature needed to deblock blocking groups from the MGs, and performing a second post exposure bake at a second temperature that is approximately equal to or greater than the activation temperature needed to deblock blocking groups from the MGs.

Abstract: Photodefinable alignment layers for chemical assisted patterning and approaches for forming photodefinable alignment layers for chemical assisted patterning are described. An embodiment of the invention may include disposing a chemically amplified resist (CAR) material over a hardmask that includes a switch component. The CAR material may then be exposed to form exposed resist portions. The exposure may produces acid in the exposed portions of the CAR material that interact with the switch component to form modified regions of the hardmask material below the exposed resist portions.

Abstract: Embodiments of the invention include microelectronic devices and methods of forming such devices. In an embodiment, a microelectronic device, includes one or more pre-patterned features formed into a interconnect layer, with a conformal barrier layer formed over the first wall, and the second wall of one or more of the pre-patterned features. A photoresist layer may formed over the barrier layer and within one or more of the pre-patterned features and a conductive via may be formed in at least one of the pre-patterned features.

Abstract: According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

Abstract: According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

Abstract: According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

Abstract: A photoresist composition (phosphoresist) including a resist capable of activation when exposed to electromagnetic energy within a first bandwidth, but relatively insensitive to electromagnetic energy within a second bandwidth and a third bandwidth, and also including a phosphor material included in the photoresist and capable of activation when exposed to electromagnetic energy within the second bandwidth. Photo-luminescent centers included in the phosphoresist are associated with the phosphor material and are capable of emitting luminescence within the first bandwidth in response to exposure to electromagnetic energy within the third bandwidth. The phosphoresist may be disposed as a relatively thin and uniform layer at a surface of a substrate, such as a semiconductor substrate.

Abstract: Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.

Abstract: According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

Abstract: Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

Abstract: Briefly, in accordance with one embodiment of the invention, an edge bead removal process is performed during the manufacture of a ferroelectric memory device while a polymer solution is still wet.

Abstract: Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

Abstract: An elevator system comprises a plurality of cars, and a group controller. A pair of multidrop communication links are connected with the cars such that, absent a communication break, a datagram transmitted by any car controller onto either link may be received by any or all of the remaining car controllers. Each car controller includes means for designating a primary link for each of the remaining cars, and means for rebroadcasting datagrams intended for another car on the primary link only when the datagram is received on a link other than the primary link.Preferably, each controller includes a means to determine when communications with another car, over the primary link, have been disrupted, and to switch the designation of primary link accordingly. In the preferred embodiment, a timer means is associated with each car, which is reset each time the car receives a datagram originating from that car.