Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An electron lens is used for focusing electrons from a cathode to an anode. The lens includes a first conductive layer with a first opening at a first distance from the cathode. The first conductive layer is held at a first voltage. The lens also includes a second conductive layer with a second opening at a second distance from the first conductive layer and a third distance from the anode. The second conductive layer is held at a second voltage substantially equal to the voltage of the anode. The first and second openings are chosen based on the first voltage, the second voltage, the first distance, the second distance and the third distance. The opening focuses the electrons emitted from the cathode onto the anode to a spot size preferably less than 40 nanometers. The force created between the cathode and anode is minimized by the structure of the lens.

Abstract: An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

Abstract: An ink-jet printhead is provided having a thin film substrate comprising a plurality of thin film layers; a plurality of ink firing heater resistors defined in said plurality of thin film layers; a polymer fluid barrier layer; and a carbon rich layer disposed on said plurality of thin film layers, for bonding said polymer fluid barrier layer to said thin film substrate.

Abstract: An ink-jet printhead is provided having a thin film substrate comprising a plurality of thin film layers; a plurality of ink firing heater resistors defined in said plurality of thin film layers; a polymer fluid barrier layer; and a carbon rich layer disposed on said plurality of thin film layers, for bonding said polymer fluid barrier layer to said thin film substrate.

Abstract: An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

Abstract: An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Abstract: An electron lens is used for focusing electrons from a cathode to an anode. The lens includes a first conductive layer with a first opening at a first distance from the cathode. The first conductive layer is held at a first voltage. The lens also includes a second conductive layer with a second opening at a second distance from the first conductive layer and a third distance from the anode. The second conductive layer is held at a second voltage substantially equal to the voltage of the anode. The first and second openings are chosen based on the first voltage, the second voltage, the first distance, the second distance and the third distance. The opening focuses the electrons emitted from the cathode onto the anode to a spot size preferably less than 40 nanometers. The force created between the cathode and anode is minimized by the structure of the lens.

Abstract: An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: A high efficiency thermal inkjet printhead which uses a novel resistor system. The printhead includes a support structure, at least one layer of material which comprises at least one opening therethrough, and at least one ink expulsion resistor located within the printhead between the support structure and the layer of material having the opening therein. The resistor is produced from at least one metal silicon nitride composition. Numerous benefits are achieved by this development including (A) reduced resistor current consumption and greater energy efficiency; (B) increased bulk resistivity of the resistor elements compared with prior systems; (C) cooler printhead operation; (D) multiple economic benefits including the ability to use lesscostly, high voltage/low current power supplies; and (E) improved reliability, stability, and longevity levels in connection with the printhead and resistor elements.

Abstract: A high efficiency thermal inkjet printhead which uses a novel resistor system. The printhead includes a support structure, at least one layer of material which comprises at least one opening therethrough, and at least one ink expulsion resistor located within the printhead between the support structure and the layer of material having the opening therein. The resistor is produced from at least one metal silicon oxynitride composition. Numerous benefits are achieved by this development including (A) reduced resistor current consumption and greater energy efficiency; (B) increased bulk resistivity of the resistor elements compared with prior systems; (C) cooler printhead operation; (D) multiple economic benefits including the ability to use less-costly, high voltage/low current power supplies; and (E) improved reliability, stability, and longevity levels in connection with the printhead and resistor elements.

Abstract: A thermal ink jet printhead that includes a thin film substrate including a plurality of thin film layers, a plurality of ink firing heater resistors defined in the plurality of thin film layers, a patterned tantalum carbide layer disposed on the plurality of thin film layers, an ink barrier layer disposed over the tantalum carbide layer, and respective ink chambers formed in the ink barrier layer over respective thin film resistors, each chamber formed by a chamber opening in barrier layer. The tantalum carbide layer forms an oxidation and wear resistance layer and/or a barrier adhesion layer.