Patents by Inventor Michael J. Rye

Michael J. Rye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PLASMA-BASED METHOD FOR DELAYERING OF CIRCUITS
    Publication number: 20230223273
    Abstract: The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.
    Type: Application
    Filed: February 14, 2023
    Publication date: July 13, 2023
    Inventors: Randy J. Shul, Caitlin Rochford Friedman, Gregory Paul Salazar, Michael J. Rye, John Mudrick, Craig Y. Nakakura, Jeffry Joseph Sniegowski, Karl Douglas Greth
  • Plasma-based method for delayering of circuits
    Patent number: 11664238
    Abstract: The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: May 30, 2023
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Randy J. Shul, Caitlin Rochford Friedman, Gregory Paul Salazar, Michael J. Rye, John Mudrick, Craig Y. Nakakura, Jeffry Joseph Sniegowski, Karl Douglas Greth
  • Method to fabricate micro and nano diamond devices
    Patent number: 9620596
    Abstract: A method including forming a diamond material on the surface of a substrate; forming a first contact and a separate second contact; and patterning the diamond material to form a nanowire between the first contact and the second contact. An apparatus including a first contact and a separate second contact on a substrate; and a nanowire including a single crystalline or polycrystalline diamond material on the substrate and connected to each of the first contact and the second contact.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: April 11, 2017
    Assignee: Sandia Corporation
    Inventors: Alfredo M. Morales, Richard J. Anderson, Nancy Y. C. Yang, Jack L. Skinner, Michael J. Rye
  • METHOD TO FABRICATE MICRO AND NANO DIAMOND DEVICES
    Publication number: 20150041810
    Abstract: A method including forming a diamond material on the surface of a substrate; forming a first contact and a separate second contact; and patterning the diamond material to form a nanowire between the first contact and the second contact. An apparatus including a first contact and a separate second contact on a substrate; and a nanowire including a single crystalline or polycrystalline diamond material on the substrate and connected to each of the first contact and the second contact.
    Type: Application
    Filed: September 18, 2014
    Publication date: February 12, 2015
    Inventors: Alfredo M. Morales, Richard J. Anderson, Nancy Y.C. Yang, Jack L. Skinner, Michael J. Rye
  • Method to fabricate micro and nano diamond devices
    Patent number: 8852998
    Abstract: A method including forming a diamond material on the surface of a substrate; forming a first contact and a separate second contact; and patterning the diamond material to form a nanowire between the first contact and the second contact. An apparatus including a first contact and a separate second contact on a substrate; and a nanowire including a single crystalline or polycrystalline diamond material on the substrate and connected to each of the first contact and the second contact.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: October 7, 2014
    Assignee: Sandia Corporation
    Inventors: Alfredo M. Morales, Richard J. Anderson, Nancy Y. C. Yang, Jack L. Skinner, Michael J. Rye