Abstract: The method disclosed herein provides a semiconducting substrate, positioning the substrate in a high density plasma process chamber, and forming a layer of silicon-rich silicon dioxide above the substrate using a high density plasma process with an oxygen/silane flowrate ratio that is less than or equal to 0.625. In another embodiment, the method provides a semiconducting substrate having a partially formed integrated circuit device formed thereabove, the integrated circuit device having a plurality of conductive interconnections, e.g., conductive lines or conductive plugs, formed thereon, and positioning the substrate in a high density plasma process chamber. The method further includes forming a first layer of silicon dioxide between the plurality of conductive interconnections using a high density plasma process with an oxygen/silane flowrate ratio less than 1.0, and forming a layer of insulating material above the first layer between the conductive interconnections.

Abstract: Various methods of inspecting circuit structures are provided. In one aspect, a method of detecting structural defects in a circuit structure is provided. A natural frequency of the circuit structure is determined and the circuit structure is immersed in a liquid. A first plurality of sonic pulses is sent through the liquid. The first plurality of sonic pulses have a first frequency range selected to produce a plurality of collapsing bubbles proximate the circuit structure. The collapsing bubbles produce a second plurality of sonic pulses that have a second frequency range near or including the natural frequency of the circuit structure whereby the second plurality of sonic pulses causes the circuit structure to resonate. Thereafter, the circuit structure is inspected for structural damage. Early identification of crystalline defects is facilitated.

Abstract: Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.

Abstract: Various methods of processing a circuit structure with a protective coating are provided. In one aspect, a method of processing a semiconductor substrate is provided that includes patterning a structure on the substrate and forming a protective coating on the patterned structure while leaving other surfaces on the substrate exposed. The exposed surfaces are cleaned by immersing the substrate in a liquid and subjecting the exposed surfaces to sonic pulses whereby the protective coating increases the strength of the patterned structure to reduce the potential for structural failure induced by the sonic pulses. The protective coating is then removed.

Abstract: Embodiments of the present invention include a cassette transporting apparatus having 1) a first fork member 31 and a second fork member 31, wherein each fork member 31 has a shaft 62 and a tab 63; 2) a first member 31 and a second fork member 31, wherein each fork member 31 includes a shaft 62 having a distal section 42 that is beveled; or 3) a curved handle 33. In one embodiment, the cassette transporting apparatus is a cassette fork 20 for manually transporting a cassette and includes a locking tab 63, the beveled distal section 42, and the curved handle 33. In another embodiment, the cassette transporting apparatus is a mechanical cassette transporting system 100 including an elevator 101 and the fork members 31. The design of the fork members 31 is cassette specific rather than both cassette and apparatus specific.