Abstract: Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre-heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.

Abstract: A chuck system for performing a substrate-biased atomic layer deposition process that forms an electrically conductive film on a substrate includes an electrically conductive substrate holder configured to support the substrate and an electrically conductive base that supports the substrate holder. An electrical isolating layer is sandwiched between the substrate holder and the base. The electrical isolating layer has an outer end and an edge recess formed in and that runs around the outer edge. The edge recess is configured to prevent the electrically conductive film from coating the entire interior of the edge recess, thereby maintaining electrical isolation between the substrate holder and the base.

Abstract: A chuck system for performing a substrate-biased atomic layer deposition process that forms an electrically conductive film on a substrate includes an electrically conductive substrate holder configured to support the substrate and an electrically conductive base that supports the substrate holder. An electrical isolating layer is sandwiched between the substrate holder and the base. The electrical isolating layer has an outer end and an edge recess formed in and that runs around the outer edge. The edge recess is configured to prevent the electrically conductive film from coating the entire interior of the edge recess, thereby maintaining electrical isolation between the substrate holder and the base.

Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

Abstract: An ALD coating system (100) includes a fixed gas manifold (710, 1300) disposed over a moving substrate with a coating surface of the substrate facing precursor orifice plate (930). A gas control system (1400) delivers gas or vapor precursors and inert gas into the fixed gas manifold which directs input gases onto a coating surface of the moving substrate. The gas control system includes a blower (1485) interfaced with the gas manifold which draws gas through the gas manifold to remove unused precursors, inert gas and reaction byproduct from the coating surface. The gas manifold is configured segregate precursor gases at the coating surface to prevent the mixing of dissimilar precursors. The gas manifold may also segregate unused precursor gases in the exhaust system so that the unused precursors can be recovered and reused.