Abstract: A high density plasma forming apparatus is configured to sputter material from a target unto a substrate. The apparatus comprises a process chamber, a target mounted within the process chamber, and a substrate mounted within the process chamber and configured to receive material sputtered from the target. The apparatus further includes a magnetic field generator by which the plasma may be directed unto the target, a side arm open to the process chamber, and a radio frequency antenna for forming a plasma in the side arm. The radio frequency antenna is a helical coil wound around the external surface of the side arm. In use, the plasma generated within the side arm enters the process chamber in a first direction and is deflected from an angle from the first direction within the process chamber.

Abstract: A process for the scrubbing of undesirable substances from an exhaust gas stream which comprises passing the stream through a hollow cathode.

Abstract: Apparatus for sputtering coatings of material onto a substrate from a chamber subject to substantial evacuation during use, which includes: a substantially cylindrical target tube having on a surface thereof the material to be sputtered, means for rotating the target tube about its longitudinal axis, magnetic means for assisting the sputtering process by the provision of a magnetic field in a sputtering zone associated with the target tube, means for moving the substrate through the chamber and into the sputtering zone, means for introducing an ionisable gas and a reactive gas into the chamber in the vicinity of the sputtering zone, wherein supplementary magnetic means are provided to form a supplementary magnetic field remote from the sputtering zone and means are provided to introduce ionisable gas in the vicinity of the supplementary magnetic field.

Abstract: Method of determining the conductance state of a non-volatile memory device switchable between high and low conductance states. The device comprises at least one p-type amorphous or microcrystalline semiconductor and an n or i-type layer. The device is irradiated with light to produce a photovoltaic response which is used to determine the conductance state.

Abstract: A semiconductor structure suitable for making a non-volatile memory comprises an electrically conducting substrate, at least two layers of different conductivity type selected from i, p and n-type amorphous or microcrystalline semiconducting material and an additional defect layer of amorphous or microcrystalline semiconductor material located between two of the said different layers. The defect layer reduces the voltage required to transform the structure to a memory device.

Abstract: A memory device comprises an electrically conducting substrate having deposited thereon a layer of an amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material to form a junction. Preferably the silicon-containing material is silicon and the junction is a heterojunction.The device has fast switching characteristics and good stability.

Abstract: Memory device comprises a glass substrate (1), a layer of indium tin oxide (2), a layer of p type semiconductor (3), a layer of i type semiconductor (4), a layer of n type semiconductor (5) and a layer of spots of an electrically conducting material (6). Silicon is the preferred semiconductor. The device is conditioned by the application of a voltage sufficiently large to cause the structure to be permanently modified to reduce the electrical resistance of the layers.It is a feature of the device that no p and n layers are adjacent.