Abstract: This invention describes an improved method of making electrical contact to porous silicon using intercalated conductive materials. The intercalation process may use gaseous, liquid or solid components to form conductive contacts to the silicon structures of the porous silicon. The intensity of the light emitted by porous silicon layers and devices can therefore be increased by the improved electrical interconnection between the mechanically, chemically and thermally fragile porous silicon and the device electrodes. The intercalation process uses conductive materials that interpenetrate the structures of the porous silicon thereby providing the improved electrical properties. Increasing the surface area over which electrical contact is made increases the junction area which allows increased electrical current flow across the junction. The increased electrical current flow across the junction provides an increased number of electrical charge carriers undergoing radiative recombination.

Abstract: A method for manufacturing a semiconductor structure having improved light mitting characteristics includes the step of exposing a semiconductor substrate, such as a silicon wafer, to an unbiased etching solution comprised of an acid, water, and an oxidizing agent to form a porous region having interstitial spaces in the semiconductor structure. Next, an electrically conductive contact structure is formed in the interstitial spaces and on the semiconductor structure. The large surface area at the interface junction between the electrical contact layer and the porous region is believed to enhance the intensity of light emitted by the porous region by allowing increased electrical current flow across the interface junction.