Abstract: Provided are a method, system, and article of manufacture for configuring host settings to specify encryption and a key label referencing a key encrypting key to use to encrypt an encryption key provided to a storage drive to use to encrypt data from the host. User settings are received to configure a data class having data attributes with encryption settings. The data class is stored with the received user encryption settings. A job is received indicating a data set to store to a removable storage medium. A data class is determined having data class attributes matching data attributes of the data set indicated in the job. A determination is made from the determined data class whether to encrypt the data.

Abstract: A computerized locking system for storage of bicycles and accessories includes: plurality of receiving bays to releasably secure the bicycles; a plurality of equipment storage units; a support surface for the receiving bays and the equipment storage units; and a computerized access box. The access box controls the locking and releasing of the bicycle and the storage unit.

Abstract: Provided are a method, system, and article of manufacture for configuring host settings to specify encryption and a key label referencing a key encrypting key to use to encrypt an encryption key provided to a storage drive to use to encrypt data from the host. User settings are received to configure a data class having data attributes with encryption settings. The data class is stored with the received user encryption settings. A job is received indicating a data set to store to a removable storage medium. A data class is determined having data class attributes matching data attributes of the data set indicated in the job. A determination is made from the determined data class whether to encrypt the data.

Abstract: An architecture and process for forming CMOS vertical replacement gate metal oxide semiconductor field-effect transistors is disclosed. The integrated circuit structure includes a semiconductor area with a major surface formed along a plane and first and second source/drain dopes regions formed in the surface. An insulating trench is formed between the first and second source/drain regions. A third doped region forming a channel of a different conductivity type than the first source/drain region is positioned over the first source/drain region. A fourth doped region is formed over the second source/drain region, having an opposite conductivity type with respect to the second source/drain region, and forming a channel region. Fifth and sixth source/drain regions are formed respectively over the third and fourth doped regions.

Abstract: A method of cast moulding toric contact lenses is provided in which each lens has a ballast and a toric central zone having a cylindrical axis, the cylindrical axis having an axis of orientation at a desired rotational angle with respect to the axis of the ballast, said method comprising the steps of: (a) providing male and female mould halves wherein the surface of one mould half defines said cylindrical axis and the other defines said ballast axis; (b) loosely assembling the mould halves and transporting the loosely assembled moulds to a filling station under conditions in which the mould halves are free to move relatively to each other in a rotational sense and are subjected to a joggling action during said transport or while being held prior to entry into the filling station; (c) lifting the male mould halves at the filling station, introducing a flowable polymerisable composition into the female mould halves and closing the male mould fully into the female mould halves and curing the polymerisable compos

Abstract: An architecture and process for forming CMOS vertical replacement gate metal oxide semiconductor field-effect transistors is disclosed. The integrated circuit structure includes a semiconductor area with a major surface formed along a plane and first and second source/drain dopes regions formed in the surface. An insulating trench is formed between the first and second source/drain regions. A third doped region forming a channel of a different conductivity type than the first source/drain region is positioned over the first source/drain region. A fourth doped region is formed over the second source/drain region, having an opposite conductivity type with respect to the second source/drain region, and forming a channel region. Fifth and sixth source/drain regions are formed respectively over the third and fourth doped regions.

Abstract: A process for fabricating novel dual-polysilicon structures comprises forming trenches of differing depths in a field oxide that overlies a substrate. The trenches are formed using a stop layer so that the depth of the trenches may be precisely controlled. Utilizing an ion implantation barrier in the trenches, ion implantation is performed to create self-aligned structures. Importantly, polysilicon is formed in the trenches in a single deposition.

Abstract: A process for fabricating novel dual-polysilicon structures comprises forming trenches of differing depths in a field oxide that overlies a substrate. The trenches are formed using a stop layer so that the depth of the trenches may be precisely controlled. Utilizing an ion implantation barrier in the trenches, ion implantation is performed to create self-aligned structures. Importantly, polysilicon is formed in the trenches in a single deposition.

Abstract: A process for fabricating novel dual-polysilicon structures comprises forming trenches of differing depths in a field oxide that overlies a substrate. Utilizing an ion implantation barrier in the trenches, ion implantation is performed to create self-aligned structures. Importantly, polysilicon is formed in the trenches in a single deposition.