Abstract: A light emitting diode (LED) is provided that includes a host substrate formed from a first material, an n-type layer formed over the host substrate, an active region formed over the n-type layer, and a p-type layer formed over the active region. A layer is formed adjacent to the host substrate and includes a second material, the second material being different from the first material or having a refractive index different from a refractive index of the first material. Further, the second material is formed with a tapered outwards sidewall profile.

Abstract: A nitride light emitting device (LED) according to a non-limiting embodiment of the present invention may include a p-pad and an n-pad, wherein the p-pad and n-pad are disposed on opposite ends of the device. A first p-branch electrode and a second p-branch electrode may extend from the p-pad toward the n-pad, with the first p-branch electrode extending along a length of the device. The second p-branch electrode may have a bent portion so as to extend along a width and length of the device. An n-branch electrode may extend from the n-pad toward the p-pad, wherein a distal end of the n-branch electrode is angled toward the bent portion of the second p-branch electrode. Alternatively, the p-branch and n-branch electrodes may be configured such that a distance between the n-branch electrode and the first and second p-branch electrodes increases with proximity to the n-pad.