Abstract: Certain embodiments provide a method of installing a floor drain/cleanout. The method generally includes positioning a drain/cleanout body comprising a first opening for receiving a finish drain/cleanout, disposing, on the drain/cleanout body, a cover base of a drain/cleanout cover assembly comprising a second opening for receiving the finish drain/cleanout, threading the finish drain/cleanout through the first opening and the second opening to retain the cover base on the drain/cleanout body, engaging an upper portion of the drain/cleanout cover assembly with the cover base of the drain/cleanout cover assembly, wherein engaging the upper portion with the cover base defines an enclosed void space above the finish drain/cleanout, installing a flooring material around at least the upper portion; removing the upper portion of the drain/cleanout cover assembly from the cover base of the drain/cleanout cover assembly to expose the void space, and positioning the finish drain/cleanout at a desired height.

Abstract: Certain embodiments provide a method of installing a floor drain/cleanout. The method generally includes positioning a drain/cleanout body comprising a first opening for receiving a finish drain/cleanout, disposing, on the drain/cleanout body, a cover base of a drain/cleanout cover assembly comprising a second opening for receiving the finish drain/cleanout, threading the finish drain/cleanout through the first opening and the second opening to retain the cover base on the drain/cleanout body, engaging an upper portion of the drain/cleanout cover assembly with the cover base of the drain/cleanout cover assembly, wherein engaging the upper portion with the cover base defines an enclosed void space above the finish drain/cleanout, installing a flooring material around at least the upper portion; removing the upper portion of the drain/cleanout cover assembly from the cover base of the drain/cleanout cover assembly to expose the void space, and positioning the finish drain/cleanout at a desired height.

Abstract: A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness td, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness tsc on the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch ?Tec; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due

Abstract: A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness td, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness tsc on the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch ?Tec; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due

Abstract: A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 ?m or less;a second layer having a thickness of no less than 0.5 ?m and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.

Abstract: Office workers are equipped with a telephone and a desktop computer, the latter including an email system which allows telephony applets to be included in email messages. Thus the recipient of a message which includes an applet might typically be presented with a call back button. When this button is selected, it automatically provides the recipient with a telephone connection through to the sender of the message. This is accomplished by the applet using JTAPI to interact with the appropriate telephony equipment in order to form the desired connection.

Abstract: A system for operating a call center comprising workstations and corresponding telephones connected to a telephony private branch switch. The system comprising: a telephony server, connected between the workstations and the telephony switch, for performing telephony functions on telephone lines connected to the switch; a groupware environment such as Lotus Notes for enabling a business application to be executed on the workstations; and a business application for execution within said groupware environment. The groupware environment having a Java Virtual Machine and a Java Applet Interface for enabling the execution of Java applets within the application independent of the groupware environment. The business application comprises a telephony applet embedded within a presentation layer which can communicate directly with the telephony server independent of the groupware environment.

Abstract: Faults occurring in a telecommunications system are monitored identifying their time of onset and reporting them to an operator through an interface if they have not cleared within a predetermined interval. Transient faults, which do clear within that interval, are not reported directly, but only if such faults occur more frequently than a predetermined rate. This is determined by establishing a scan interval, and an analysis period equal to a plurality of scan intervals, monitoring the system continuously for the occurrences of faults, and storing their times of occurrence in a store. At the end of each scan interval, the number of occurrences of the fault during the analysis period which ends at the end of the scan interval are counted by a counter. If the number of occurrences of the fault in the analysis period is equal to or greater than a threshold value selected by user input an alarm indicator is activated.

Abstract: Light beam deflection means particularly for range compensation apparatus in weapons training aids for altering the angle of inclination of a beam of light to a selected value, comprising a pivotally mounted mirror positioned to reflect the beam of light, a cam movable to a position dependent upon the selected inclination, a cam follower engageable with the cam, an L-shaped arm interconnecting the cam follower and the mirror, and a stop movable between an operative extended position in which the stop acts to retain the mirror in a datum position, irrespective of the position of the cam, corresponding to a datum inclination of the beam, and a retracted position in which the cam follower engages the cam in such manner that the mirror occupies a pivotal position which reflects the beam of light at the selected inclination.