Abstract: A random-access memory (RAM) includes a plurality of memory banks, a memory channel interface circuit, and a metadata processing circuit. The memory channel interface circuit couples to a memory channel adapted for coupling to a memory controller. The metadata processing circuit is connected to the memory channel interface circuit and receiving a poison bit sent over the memory channel associated with a write command and write data for the write command. The RAM, responsive to the poison bit indicating that the write data is poisoned, stores at least one of: the poison bit and a code indicating a value of the poison bit in a selected memory bank.

Abstract: A memory package includes first, second, third, and fourth channels arranged consecutively in a clockwise direction on the memory package, each of the first, second, third, and fourth channels having access circuitry and memory arrays. In a first mode, the first channel controls access to the memory arrays in the second channel and the fourth channel controls access to the memory arrays in the third channel.

Abstract: A read clock circuit selectively provides a read clock signal from a memory to a memory controller over a memory bus. A pulse-amplitude modulation (PAM) driver including an input and an output capable of driving at least three levels indicating respective digital values. A digital control circuit is coupled to the PAM driver and operable to cause the PAM driver to provide a preamble signal before the read clock signal, the preamble signal including an initial toggling state in which the PAM driver toggles between two selected levels at a first rate, and a final toggling state in which the PAM driver toggles between two selected levels at a second rate higher than the first rate, with a length of the initial toggling state and a length of the final toggling state are based on values in a mode register.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on a command protocol. For instance, the method can include enabling a write clock data recovery (WCDR) mode of operation. The method can also include transmitting WCDR data from a processing unit to the memory device during the WCDR mode of operation and another mode of operation of the memory device. Based on a phase shift in the WCDR data, a phase difference between a signal on a data bus and a write clock signal can be adjusted. Further, the method can include transmitting the signal on the data bus based on the adjusted phase difference between the signal on the data bus and the write clock signal.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on a command protocol. For instance, the method can include enabling a write clock data recovery (WCDR) mode of operation. The method can also include transmitting WCDR data from a processing unit to the memory device during the WCDR mode of operation and another mode of operation of the memory device. Based on a phase shift in the WCDR data, a phase difference between a signal on a data bus and a write clock signal can be adjusted. Further, the method can include transmitting the signal on the data bus based on the adjusted phase difference between the signal on the data bus and the write clock signal.