Abstract: An improved mask for screening a conductive paste onto a microelectronic substrate is disclosed. The mask comprises a metal foil having a thickness of less than about 200 microns, having a stencil formed in the foil and extending inwardly to a first depth from a first exterior surface of the foil, said stencil comprising a plurality of voids corresponding to the desired pattern, and having a mesh formed in the foil and extending inwardly to a second depth from a second exterior surface of the foil opposite said first exterior surface, said mesh comprising a plurality of voids in communication with the voids of the stencil, wherein the ratio of said first depth to said second depth is less than 60:40, and wherein the mask is produced from an essentially homogenous metal sheet. Such masks are useful for fabricating microelectronic substrates having screened lines of conductive paste.