Abstract: A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

Abstract: A method, apparatus, and system are disclosed that provide an approved address couplet listing for communication handling. An inbound communication including sender and recipient field entries may be compared as a pair or couplet against the listing to determine whether the inbound communication should be discarded, subjected to additional (spam related) processing, or forwarded for storage or delivery purposes. The comparison may take place in conjunction with one or more hashing functions.

Abstract: A method, apparatus, and system are disclosed that provide an approved address couplet listing for communication handling. An inbound communication including sender and recipient field entries may be compared as a pair or couplet against the listing to determine whether the inbound communication should be discarded, subjected to additional (spam related) processing, or forwarded for storage or delivery purposes. The comparison may take place in conjunction with one or more hashing functions.

Abstract: A device and method for chemicals to be fed into a water system, treating the water system as it enters, for example, a fire protection mains and/or fire protection systems (FPS) to protect and maintain the longevity of the water system preventing damages to the water system or enhancing the operation characteristics of the system. This device is a treatment system that may be installed as a portable or permanent device with chemicals such as, corrosion inhibitors, wetting agents, polymeric dispersants, biocides, biostats or other water chemical enhancing effects with means for injecting the chemicals into th fire protection system or a bypass feed system (20) utilizing the fluid means without the need for any electricity. Activation of the pump(1) occurs when water enters the FPS mains and FPS sprinkler system from an outside source. Valving (22, 24) is included to isolate the pump and drums, storage tank to prevent backflow from the FPS.

Abstract: Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber.

Abstract: The present disclosure relates to a Silicon Carbide (SiC) semiconductor device having both a high blocking voltage and low on-resistance. In one embodiment, the semiconductor device has a blocking voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milli-ohms centimeter squared (m?·cm2) and even more preferably less than 5 m?·cm2. In another embodiment, the semiconductor device has a blocking voltage of at least 15 kV and an on-resistance of less than 15 m?·cm2 and even more preferably less than 7 m?·cm2. In yet another embodiment, the semiconductor device has a blocking voltage of at least 20 kV and an on-resistance of less than 20 m?·cm2 and even more preferably less than 10 m?·cm2. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), or a PIN diode.

Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0?X<1 and 0?Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.

Abstract: A thermal distillation system comprises heating means and cooling means arranged to heat and cool, respectively, treatable liquid in a liquid circuit having a first section between a heating means output and cooling means input, and a second section between an a cooling means output and heating means input, and further comprises distillation stages, each including an evaporator on the first section and a condenser on the second section in heat exchange relationship with liquid in the second section, a carrier gas circuit, on which the evaporator and condenser are arranged, and an output for outputting liquid extracted, wherein the stages are arranged such that their evaporators are disposed along the first section in a direction from the heating means to the cooling means and their condensers are disposed in corresponding order along the second section in a direction from the heating means to the cooling means.

Abstract: According to some embodiments, a method receives a request for contact information associated with a customer. The method determines a plurality of contact values associated with the customer. The plurality of contact values include a first set of contact values that a first line of business associates with the customer and a second set of contact values that a second line of business associates with the customer. The method determines priority information associated with each contact value. In response to the request for contact information, the method communicates one or more of the contact values. For each contact value being communicated, the method communicates at least some of the priority information associated with the each contact value being communicated.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.

Abstract: A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.

Abstract: A method, apparatus, and system are disclosed that provide an approved address couplet listing for communication handling. An inbound communication including sender and recipient field entries may be compared as a pair or couplet against the listing to determine whether the inbound communication should be discarded, subjected to additional (spam related) processing, or forwarded for storage or delivery purposes. The comparison may take place in conjunction with one or more hashing functions.

Abstract: Articles for applying color on a surface comprise a sheet of dry color component and an adhesive on one surface of the sheet of dry color component. The article further includes a releasable liner, and the sheet of dry color component is arranged between the releasable liner and the adhesive. Methods for providing a substantially permanent color effect on an architectural surface comprise delivering such an article to the architectural surface.

Abstract: A hair curler system is formed of unique hair rollers that are stored in a hair curler station. In one aspect, the hair rollers are at least partially conical in shape. The conically-shaped rollers broaden the ability of the rollers to curl and style the hair over non-conical rollers. The conically-shaped hot rollers also provide curl and wave dimension to the hair. The hair curler station is adapted to selectively control heating of the curlers or clips that secure curlers to hair.

Abstract: Articles for applying color on a surface comprise a sheet of dry color component and an adhesive on one surface of the sheet of dry color component. The article further includes a releasable liner, and the sheet of dry color component is arranged between the releasable liner and the adhesive. Methods for providing a substantially permanent color effect on an architectural surface comprise delivering such an article to the architectural surface.

Abstract: An apparatus and method for controlling the common mode voltage across a data storage device write head. The write current is supplied by a first plurality of parallel current sources each independently activated to limit the common mode voltage generated across the write head. A plurality of parallel resistive elements responsive to current supplied by a second plurality of parallel current sources bias an output transistor that further controls the write current. Each of the plurality of parallel resistive elements and each of the second plurality of parallel current sources is also independently activated to limiting the common mode voltage generated across the write head.

Abstract: Articles for applying color on a surface comprise a sheet of dry color component and an adhesive on one surface of the sheet of dry color component. In one embodiment, the article is free of a releasable liner and a carrier sheet. In another embodiment, the sheet of dry color component and adhesive have a combined thickness of about 3 mils or less. Methods for providing a substantially permanent color effect on an architectural surface comprise applying dry color component to the architectural surface.

Abstract: An apparatus and method for providing electrostatic discharge protection for a disc drive read head. A pair of depletion mode MOSFETS, and a fuse associated with each are disposed between the read head output terminals. The MOSFETS are controlled to an “off” state for testing the preamplifier prior to assembly of the read head. After assembly of the head, a second pair of MOSFETS is gated to an “on” state to open the fuses and thus permit normal operation of the read head.

Abstract: An outsole unit for an item of footwear comprises a base layer of a flexible material having fibres extending from one surface, for example a napped leather such as pigskin suede or a textile material, and one or more lugs of thermoplastic polyurethane (TPU) moulded directly to the fibrous surface so as to form a tread. Multiple lugs may form a regular array separated by grooves, and may be connected solely by the base layer, by a skin of TPU extending across the base layer or by narrow connecting elements of TPU. An upper of an item of footwear may comprise a backing of suede leather with a grid of strips of TPU moulded to its napped surface. An item of footwear may comprise the outsole unit of the invention, the upper of the invention, or both.