Abstract: An apparatus for processing data 2 is provided with a time-to-digital converter 18 which serves to measure signal processing delay through one or more signal paths through a processing stage. This measured delay generates a delay value representing a plurality of instances of the signal processing delay which have been measured. Analysis is performed under software control to estimate a worst case signal processing delay through the processing stage based upon the delay values which have been generated. An adjustment of the operating parameters, such as supply voltage and clock frequency, of the apparatus is made to provide a timing margin through the processing stage sufficient to satisfy the worst case signal processing delay which has been estimated without an excessive margin.

Abstract: A memory cell structure for a memory device includes a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to the floating gate node and has a first programming terminal, and the coupling capacitor stack is connected to the floating gate node and has a second programming terminal. The coupling capacitor stack includes at least two coupling capacitors arranged in series between the floating gate node and the second programming terminal, with the coupling capacitor stack having a larger capacitance than the tunnelling capacitor. Such a memory cell structure is efficient in terms of area, and can be manufactured using standard CMOS logic manufacturing processes, thereby avoiding some of the complexities involved in the production of conventional EEPROM and Flash memory devices.

Abstract: An apparatus for processing data 2 is provided with a time-to-digital converter 18 which serves to measure signal processing delay through one or more signal paths through a processing stage. This measured delay generates a delay value representing a plurality of instances of the signal processing delay which have been measured. Analysis is performed under software control to estimate a worst case signal processing delay through the processing stage based upon the delay values which have been generated. An adjustment of the operating parameters, such as supply voltage and clock frequency, of the apparatus is made to provide a timing margin through the processing stage sufficient to satisfy the worst case signal processing delay which has been estimated without an excessive margin.

Abstract: A memory cell structure for a memory device is provided, the memory cell structure comprising a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to the floating gate node and has a first programming terminal, whilst the coupling capacitor stack is connected to the floating gate node and has a second programming terminal. The coupling capacitor stack comprises at least two coupling capacitors arranged in series between the floating gate node and the second programming terminal, with the coupling capacitor stack having a larger capacitance than the tunnelling capacitor. During a programming operation, a voltage difference is established between the first programming terminal and the second programming terminal to cause charge tunnelling to occur through the tunnelling capacitor, such that after the programming operation a charge is stored in the floating gate node.