Abstract: A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect and a second interconnect. The first interconnect is on an interconnect level extending in a length direction to connect the PMOS drains together, and the second interconnect is on the interconnect level extending in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level physically couple the first interconnect and the second interconnect to an output of the CMOS device. A third interconnect on the interconnect level extends perpendicular to the length direction and offset from the set of interconnects. The third interconnect is capable of flowing current from the PMOS drains or from the NMOS drains to the output of the CMOS device.

Abstract: A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect and a second interconnect. The first interconnect is on an interconnect level extending in a length direction to connect the PMOS drains together, and the second interconnect is on the interconnect level extending in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level physically couple the first interconnect and the second interconnect to an output of the CMOS device. A third interconnect on the interconnect level extends perpendicular to the length direction and offset from the set of interconnects. The third interconnect is capable of flowing current from the PMOS drains or from the NMOS drains to the output of the CMOS device.

Abstract: A CMOS device with a plurality of PMOS transistors and a plurality of NMOS transistors includes a first interconnect and a second interconnect on an interconnect level connecting a first subset and a second subset of PMOS drains together, respectively. The first and second subsets are different and the first and second interconnect are disconnected on the interconnect level. A third interconnect and a fourth interconnect on the interconnect level connect a first subset and a second subset of the NMOS drains together, respectively. The third interconnect and the fourth interconnect are disconnected on the interconnect level. The first, second, third, fourth interconnects are coupled together through at least one other interconnect level. Additional interconnects on the interconnect level connect the first and third interconnects together, and the second and fourth interconnects together, to provide parallel current paths with a current path through the at least one other interconnect level.

Abstract: Dynamic random access memory (DRAM) backchannel communication systems and methods are disclosed. In one aspect, a backchannel communication system allows a DRAM to communicate error correction information and refresh alert information to a System on a Chip (SoC), applications processor (AP), or other memory controller.

Abstract: A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect on an interconnect level extending in a length direction to connect the PMOS drains together. A second interconnect on the interconnect level extends in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level couple the first interconnect and the second interconnect together. A third interconnect on the interconnect level extends perpendicular to the length direction and is offset from the set of interconnects to connect the first interconnect and the second interconnect together.

Abstract: Dynamic random access memory (DRAM) backchannel communication systems and methods are disclosed. In one aspect, a backchannel communication system allows a DRAM to communicate error correction information and refresh alert information to a System on a Chip (SoC), applications processor (AP), or other memory controller.

Abstract: Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses are disclosed. In one aspect, a first port within a DRAM system is coupled to a second port via a loopback connection. A signal is sent to the first port from a System-on-Chip (SoC), and passed to the second port through the loopback connection. The signal is then returned to the SoC, where it may be examined by a closed-loop engine of the SoC. A result corresponding to a hardware parameter may be recorded, and the process may be repeated until an optimal result for the hardware parameter is achieved at the closed-loop engine. By using a port-to-port loopback configuration, the DRAM system parameters regarding timing, power, and other parameters associated with the DRAM system may be trained more quickly and with lower boot memory usage.

Abstract: Dynamic random access memory (DRAM) backchannel communication systems and methods are disclosed. In one aspect, a backchannel communication system allows a DRAM to communicate error correction information and refresh alert information to a System on a Chip (SoC), applications processor (AP), or other memory controller.

Abstract: Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses are disclosed. In one aspect, a first port within a DRAM system is coupled to a second port via a loopback connection. A signal is sent to the first port from a System-on-Chip (SoC), and passed to the second port through the loopback connection. The signal is then returned to the SoC, where it may be examined by a closed-loop engine of the SoC. A result corresponding to a hardware parameter may be recorded, and the process may be repeated until an optimal result for the hardware parameter is achieved at the closed-loop engine. By using a port-to-port loopback configuration, the DRAM system parameters regarding timing, power, and other parameters associated with the DRAM system may be trained more quickly and with lower boot memory usage.

Abstract: A source-synchronous system is provided in which a non-uniform interface may exist in a data source endpoint as well as in a data sink endpoint.

Abstract: Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses are disclosed. In one aspect, a first port within a DRAM system is coupled to a second port via a loopback connection. A training signal is sent to the first port from a System-on-Chip (SoC), and passed to the second port through the loopback connection. The training signal is then returned to the SoC, where it may be examined by a closed-loop training engine of the SoC. A training result corresponding to a hardware parameter may be recorded, and the process may be repeated until an optimal result for the hardware parameter is achieved at the closed-loop training engine. By using a port-to-port loopback configuration, the DRAM system parameters regarding timing, power, and other parameters associated with the DRAM system may be trained more quickly and with lower boot memory usage.

Abstract: Systems and methods for tuning a voltage are described herein. In one embodiment, a method comprises sending a data signal to first and second flops via a data path, latching in the data signal at the first flop using a clock signal, and latching the data signal at the second flop using a delayed version of the clock signal. The method also comprises detecting a mismatch between outputs of the first and second flops, and adjusting the voltage based on the detected mismatch.

Abstract: A source-synchronous system is provided in which a non-uniform interface may exist in a data source endpoint as well as in a data sink endpoint.

Abstract: A source-synchronous system is provided in which a non-uniform interface may exist in a data source endpoint as well as in a data sink endpoint.

Abstract: A driver circuit includes an output driver including a plurality of output driver legs. The driver circuit further includes a duty cycle adjuster configured to adjust a duty cycle of a signal provided to the output driver. The driver circuit further includes an isolation module configured to isolate at least one output driver leg of the output driver legs from remaining output driver legs of the output driver legs. The driver circuit further includes a duty cycle monitor configured to monitor an output of the at least one output driver leg when the at least one output driver leg is isolated from the remaining output driver legs, and to provide the monitored output to the duty cycle adjuster.

Abstract: Systems and methods for tuning a voltage are described herein. In one embodiment, a method comprises sending a data signal to first and second flops via a data path, latching in the data signal at the first flop using a clock signal, and latching the data signal at the second flop using a delayed version of the clock signal. The method also comprises detecting a mismatch between outputs of the first and second flops, and adjusting the voltage based on the detected mismatch.

Abstract: A source-synchronous system is provided in which a non-uniform interface may exist in a data source endpoint as well as in a data sink endpoint.

Abstract: Systems and methods for operating transistors near or in the sub-threshold region to reduce power consumption are described herein. In one embodiment, a method for low power operation comprises sending a clock signal to a flop via a clock path comprising a plurality of transistors, wherein the clock signal has a high state corresponding to a high voltage that is above threshold voltages of the transistors in the clock path. The method also comprises sending a data signal to the flop via a data path comprising a plurality of transistors, wherein the data signal has a high state corresponding to a low voltage that is below threshold voltages of the transistors in the data path. The method further comprises latching the data signal at the flop using the clock signal.

Abstract: An output driver configured to drive an output node includes a pull-down section having a plurality of legs and a pull-up section having a plurality of pull-up legs. Each leg and pull-up leg includes a data path and a calibration path. The data paths in the pull-down section are configured to conduct to ground responsive to an assertion of a complement data output signal whereas the data paths in the pull-up section are configured to conduct to a power supply node responsive to a de-assertion of the complement data output signal.

Abstract: Providing memory training of dynamic random access memory (DRAM) systems using port-to-port loopbacks, and related methods, systems, and apparatuses are disclosed. In one aspect, a first port within a DRAM system is coupled to a second port via a loopback connection. A training signal is sent to the first port from a System-on-Chip (SoC), and passed to the second port through the loopback connection. The training signal is then returned to the SoC, where it may be examined by a closed-loop training engine of the SoC. A training result corresponding to a hardware parameter may be recorded, and the process may be repeated until an optimal result for the hardware parameter is achieved at the closed-loop training engine. By using a port-to-port loopback configuration, the DRAM system parameters regarding timing, power, and other parameters associated with the DRAM system may be trained more quickly and with lower boot memory usage.