Abstract: A high sensitivity, organic solvent developable, high resolution photoresist composition for use in E-beam lithography is disclosed. The composition of the present invention comprises a high sensitivity, soluble, film forming photoresist composition of dendrimeric calix [4]arene derivatives and processes for forming lithographic patterns with a crosslinker selected from glycoluril derivatives capable of reacting with these dendrimer under acid catalysis, a photoacid generator and an organic solvent. The composition of the present invention is particularly useful for production of negative tone images of high resolution (less than 100 nanometers).

Abstract: A method of improving the etch resistance of a patterned imageable resist prior to patterning an underlying substrate layer is provided. Specifically, the method employed by the present invention comprises applying a layer of an imageable resist to a substrate layer; patterning the layer of imageable resist by removing selective areas thereof; and treating the patterned imageable resist with an atmosphere comprising molecules of a hardening agent so as to obtain a hardened resist surface which etches at a slower rate than that of the untreated resist.