Abstract: A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.

Abstract: Ligament repair. Some examples are directed to methods and related systems for calibration of optical equipment for use in a computer-guided endoscopic ligament repair, such as repair of an anterior cruciate ligament (ACL). Other examples are directed to methods and related systems verification of registration between three-dimensional bone models and bone visible through an endoscope during ligament repair. Yet still further examples are directed to intraoperative changes to the tunnel plans for ligament repair.

Abstract: A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.

Abstract: A MEMS element within a semiconductor device is enclosed within a cavity bounded at least in part by hydrogen-permeable material. A hydrogen barrier is formed within the semiconductor device to block propagation of hydrogen into the cavity via the hydrogen-permeable material.

Abstract: A MEMS element within a semiconductor device is enclosed within a cavity bounded at least in part by hydrogen-permeable material. A hydrogen barrier is formed within the semiconductor device to block propagation of hydrogen into the cavity via the hydrogen-permeable material.

Abstract: The present disclosure relates to computer implemented methods and systems for processing of workorder evidence. The workorder has associated objects of interest and metadata describing at least one workorder attribute. Workorder evidence to be processed comprises an image. The image is validated to assess whether the image is associated with the workorder. Validation comprises one or both of comparing image attributes to workorder attributes to detect a match, and comparing the image to previous images to ensure that the image is not a match for a previous image. The system or method detects whether an object of interest is depicted in the image using an object detection algorithm. The workorder evidence is classified depending on whether the image is detected as valid and the object or interest is detected in the image.

Abstract: A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.

Abstract: A gas turbine engine is provided including a turbomachine having a compressor section, a combustion section, and a turbine section arranged in serial flow order; a rotor assembly driven by the turbomachine, the rotor assembly, the turbomachine, or both comprising a substantially annular duct relative to the centerline of the gas turbine engine, the annular duct defining a flowpath; a heat exchanger positioned within the annular duct and extending substantially continuously along the circumferential direction, the heat exchanger comprising a first material defining a heat exchange surface exposed to the flowpath, wherein the first material defines a heat exchange coefficient and wherein the heat exchange surface defines a surface area (A), and wherein the heat exchanger has an effective transmission loss (ETL) of between 5 decibels and 1 decibel for an operating condition.

Abstract: Disclosed are systems and techniques for extracting user body shape (e.g., a representation of the three-dimensional body surface) from user behavioral data. The behavioral data may not be explicitly body-shape-related, and can include shopping history, social media likes, or other recorded behaviors of the user within (or outside of) a networked content delivery environment. The determined body shape can be used, for example, to generate a virtual fitting room user interface.

Abstract: Systems and methods are provided for generating an image of a posed human figure or other subject using a neural network that is trained to translate a set of points to realistic images by reconstructing projected surfaces directly in the pixel space or image space. Input to the image generation process may include parameterized control features, such as body shape parameters, pose parameters and/or a virtual camera position. These input parameters may be applied to a three-dimensional model that is used to generate the set of points, such as a sparsely populated image of color and depth information at vertices of the three-dimensional model, before additional image generation occurs directly in the image space. The visual appearance or identity of the synthesized human in successive output images may remain consistent, such that the output is both controllable and predictable.

Abstract: A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.

Abstract: A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.

Abstract: The present disclosure relates to computer implemented methods and systems for processing of workorder evidence. The workorder has associated objects of interest and metadata describing at least one workorder attribute. Workorder evidence to be processed comprises an image. The image is validated to assess whether the image is associated with the workorder. Validation comprises one or both of comparing image attributes to workorder attributes to detect a match, and comparing the image to previous images to ensure that the image is not a match for a previous image. The system or method detects whether an object of interest is depicted in the image using an object detection algorithm. The workorder evidence is classified depending on whether the image is detected as valid and the object or interest is detected in the image.

Abstract: A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.

Abstract: An apparatus and method of managing negative incidence of an airfoil are provided. The apparatus includes a first row of stationary turbine main vanes and a second row of auxiliary vanes extending radially inwardly from a stationary casing of the turbine proximate the adjacent leading edge of the main vane. The apparatus also includes a flow channel defined between a pressure side of an auxiliary vane of the second row of auxiliary vanes and a suction side of an adjacent main vane of the row of stationary turbine main vanes.

Abstract: An apparatus and method of managing negative incidence of an airfoil are provided. The apparatus includes a row of vane pairs including a first row of main vanes extending radially inwardly from a stationary casing member and spaced circumferentially about a first axial location of the stationary casing member. The apparatus also includes a second row of auxiliary vanes extending radially inwardly from the stationary casing member and spaced circumferentially about a second axial location of the stationary casing member. The apparatus also includes a flow channel defined between a pressure side of each auxiliary vane and a suction side of an adjacent main vane proximate a leading edge of the adjacent main vane.

Abstract: A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.

Abstract: In a method of operating a two-dimensional array of ultrasonic transducers, a plurality of array positions comprising pluralities of ultrasonic transducers of the two-dimensional array of ultrasonic transducers is defined, the plurality of array positions each comprising a portion of ultrasonic transducers of the two dimensional array of ultrasonic transducers. For each array position of the plurality of array positions, a plurality of ultrasonic transducers associated with the respective array position are activated. The activation includes transmitting ultrasonic signals from a first group of ultrasonic transducers of the plurality of ultrasonic transducers, wherein at least some ultrasonic transducers of the first group of ultrasonic transducers are phase delayed with respect to other ultrasonic transducers of the first group of ultrasonic transducers, the first group of ultrasonic transducers for forming a focused ultrasonic beam.

Abstract: A MEMS element within a semiconductor device is enclosed within a cavity bounded at least in part by hydrogen-permeable material. A hydrogen barrier is formed within the semiconductor device to block propagation of hydrogen into the cavity via the hydrogen-permeable material.

Abstract: A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.