Patents by Inventor Michael Junghaehnel

Michael Junghaehnel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9443703
    Abstract: An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: September 13, 2016
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Henry Morgner, Gösta Mattausch, Christoph Metzner, Michael Junghähnel, Rainer Labitzke, Lars Klose, Torsten Werner, Jörg Kubusch
  • Publication number: 20140354149
    Abstract: An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode.
    Type: Application
    Filed: October 17, 2012
    Publication date: December 4, 2014
    Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Henry Morgner, Gösta Mattausch, Christoph Metzner, Michael Junghähnel, Rainer Labitzke, Lars Klose, Torsten Werner, Jörg Kubusch
  • Patent number: 6605312
    Abstract: Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is deposited by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.
    Type: Grant
    Filed: September 26, 2001
    Date of Patent: August 12, 2003
    Assignees: Fraunhofer-Gesellschaftt zur Forderung der Angewandten Forschung e.V., International Business Machines Corporation
    Inventors: Torsten Winkler, Ralf Blüthner, Klaus Goedicke, Michael Junghähnel, Hans Buchberger, Manfred Müller, Arno Hebgen, Hans-Hermann Schneider
  • Patent number: 6436248
    Abstract: A method of coating of thin film coated magnetic disks and thin film magnetic disks made thereby is described. In accordance with the invention, a barrier layer is deposited on the substrate before the underlayer film(s) to increase the corrosion resistance of metallic substrate magnetic disks and, in the case of nonmetallic substrates, to reduce the diffusion of water to the substrate and of freely moveable ions from the substrate. Preferably the barrier layer is deposited by medium frequency pulsed sputtering at a frequency of 10 to 200 kHz and a pulse length to pulse pause ratio from 5:1 to 1:10. Aluminum or chromium are the preferred materials for the barrier layer. Additional improvements may be achieved where the sputtering process gas contains a proportion of oxygen and/or nitrogen.
    Type: Grant
    Filed: November 5, 1999
    Date of Patent: August 20, 2002
    Assignee: International Business Machines Corporation
    Inventors: Heinz Baur, Ralf Bluethner, Hans Buchberger, Klaus Goedicke, Michael Junghaehnel, Karl-Heinz Lehnert, Manfred Mueller, Hans-Herrman Schneider, Torsten Winkler
  • Patent number: 6340416
    Abstract: Magnetron discharges are pulse-operated to avoid the so-called “arcing”. In the case of magnetron discharges from alternating current-fed magnetrons, the process is limited to the minor power of the energy supply because of the load-carrying capacity of the required electric components. When the magnetron discharges are fed by direct current, their effectiveness deteriorates because of the deposition of layers on the anode surfaces. The new process should enable a high supply power and prevent arcing. In magnetron discharges with at least two magnetron electrodes, the energy is supplied in such a way that at least one magnetron electrode is a cathode or anode and a number n1 of direct current pulses of said polarity is supplied. The poles of at least one magnetron electrode are then reversed and a number n2 of direct currents of this polarity are supplied. The process is carried on in this manner, the frequency of the direct current pulses being higher than that of the polarity reversals.
    Type: Grant
    Filed: July 22, 1999
    Date of Patent: January 22, 2002
    Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschund e.V.
    Inventors: Klaus Goedicke, Torsten Winkler, Michael Junghähnel, Fred Fietzke, Volker Kirchhoff, Jonathan Reschke