Abstract: Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is separated by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.

Abstract: Process and control arrangement for introducing pulsing energy introduction into magnetron discharges. The process includes feeding a charge to the electrodes of a magnetron arrangement via a ignition source at a time t0, and, after the feeding of the electric charge, determining an ignition of the magnetron discharge. The process also includes introducing a current, having a predetermined value, from a boost source at a time t1, and, at a time t2, separating the ignition source from the electrodes of the magnetron arrangement. The introduction of the current by the boost source continues for a certain duration tEIN. The process also includes interrupting the introduction of the electric energy for a predetermined time tAUSj.

Abstract: A procedure and apparatus for the application of carbon layers using reactive magnetron sputtering is described. The process includes sputtering of at least two targets made of carbon in a reactive atmosphere with a pulsed energy feed. During a pattern period of the pulses all targets (magnetrons) are once switched on as an anode and at least one target is switched as an anode at all times Various embodiments include detection and limitation of the "microarcs"; executing of regeneration processes according to fixed predetermined time intervals for at least 5 seconds. In one embodiment a microarc is detected on a magnetron and if a next pulse-off time is more than a selected time period away, then the magnetron is connected to a positive pole of the power supply.

Abstract: A method and apparatus for depositing an underlayer and/or a magnetic thin film layer on a data storage disk are described. The sputtering power is supplied in the form of pulses during the application of the underlayer and/or magnetic storage to periodically ignite the plasma and increase the charge-carrier density in the sputtering chamber. The repetition frequency and parameters for the pulses and pauses between pulses are adjusted to achieve a desired nominal value for the coercive field strength of the magnetic layer. Preferably the repetition frequency of the power switching is from 10 to 80 kHz and the ratio of pulse length to pulse pause is within 5:1 to 1:5.