Abstract: An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode.

Abstract: An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode.

Abstract: Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is deposited by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.

Abstract: Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is separated by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.

Abstract: Process and control arrangement for introducing pulsing energy introduction into magnetron discharges. The process includes feeding a charge to the electrodes of a magnetron arrangement via a ignition source at a time t0, and, after the feeding of the electric charge, determining an ignition of the magnetron discharge. The process also includes introducing a current, having a predetermined value, from a boost source at a time t1, and, at a time t2, separating the ignition source from the electrodes of the magnetron arrangement. The introduction of the current by the boost source continues for a certain duration tEIN. The process also includes interrupting the introduction of the electric energy for a predetermined time tAUSj.

Abstract: Magnetron discharges are pulse-operated to avoid the so-called “arcing”. In the case of magnetron discharges from alternating current-fed magnetrons, the process is limited to the minor power of the energy supply because of the load-carrying capacity of the required electric components. When the magnetron discharges are fed by direct current, their effectiveness deteriorates because of the deposition of layers on the anode surfaces. The new process should enable a high supply power and prevent arcing. In magnetron discharges with at least two magnetron electrodes, the energy is supplied in such a way that at least one magnetron electrode is a cathode or anode and a number n1 of direct current pulses of said polarity is supplied. The poles of at least one magnetron electrode are then reversed and a number n2 of direct currents of this polarity are supplied. The process is carried on in this manner, the frequency of the direct current pulses being higher than that of the polarity reversals.

Abstract: A procedure and apparatus for the application of carbon layers using reactive magnetron sputtering is described. The process includes sputtering of at least two targets made of carbon in a reactive atmosphere with a pulsed energy feed. During a pattern period of the pulses all targets (magnetrons) are once switched on as an anode and at least one target is switched as an anode at all times Various embodiments include detection and limitation of the "microarcs"; executing of regeneration processes according to fixed predetermined time intervals for at least 5 seconds. In one embodiment a microarc is detected on a magnetron and if a next pulse-off time is more than a selected time period away, then the magnetron is connected to a positive pole of the power supply.

Abstract: A method and apparatus for depositing an underlayer and/or a magnetic thin film layer on a data storage disk are described. The sputtering power is supplied in the form of pulses during the application of the underlayer and/or magnetic storage to periodically ignite the plasma and increase the charge-carrier density in the sputtering chamber. The repetition frequency and parameters for the pulses and pauses between pulses are adjusted to achieve a desired nominal value for the coercive field strength of the magnetic layer. Preferably the repetition frequency of the power switching is from 10 to 80 kHz and the ratio of pulse length to pulse pause is within 5:1 to 1:5.