Abstract: Detector structures and methods of fabrication of detector structures that include a radiation sensor having a plurality of macropixels, each including a plurality of sub-pixels, and an anti-scatter grid (ASG) located over the radiation sensor, where the ASG has a pitch between adjacent septa of the ASG along at least one dimension that is less than 800?m, and the septa of the ASG partially shield an equal number of peripheral edges of each sub-pixel of each of the macropixels. In various embodiments, the ASG includes a plurality of first septa having a first vertical height dimension and a plurality of second septa having a second vertical height dimension different from the first vertical height dimension.

Abstract: A method of fabricating radiation sensor dies includes forming a plurality of radiation-sensitive detector elements and a plurality of visible identifiers on at least some of the radiation-sensitive detector elements on a substrate, where each visible identifier is located in a different sub-region of the substrate containing a subset of the radiation-sensitive detector elements, and separating the sub-regions of the substrate from one another to provide a plurality of radiation sensor dies, where the visible identifier on each radiation sensor die uniquely identifies the radiation sensor die with respect to the other radiation sensor dies of the plurality of radiation sensor dies.

Abstract: A detector structure includes a carrier board, at least one application specific integrated circuit (ASIC) located over the carrier board, the at least one ASIC including signal processing channel circuitry, at least one radiation sensor located over a front side of the at least one ASIC, and a protective coating located over sidewalls of the at least one radiation sensor and over at least a portion of the carrier board and the at least one ASIC. In various embodiments, the detector structure including the at least one radiation sensor is assembled prior to depositing a protective coating layer over portions of the detector structure including the sidewalls of the at least one radiation sensor.

Abstract: A detector array includes a plurality of radiation sensors each including a two dimensional array of pixel detectors. The plurality of radiation sensors are arranged in rows of pixel detectors extending in a first direction and columns of pixel detectors extending in a second direction, and at least some of the plurality of the radiation sensors that are located adjacent to one another along the first direction are offset from one another along the second direction by an integer number of pixel detectors.

Abstract: Detector structures including at least one radiation sensor including an array of pixel detectors, an application specific integrated circuit (ASIC) including a plurality of signal processing channel circuits electrically coupled to respective pixel detectors of the array of pixel detectors, each signal processing channel circuit generating photon count data for multiple energy bins for a respective pixel detector, and at least one compensation circuit that receives photon count data for multiple energy bins from one or more signal processing channel circuits and adjusts a response characteristic of at least one signal processing channel circuit of the ASIC based on the received photon count data. The adjustments to the response characteristic of at least one signal processing channel circuit may include adjusting energy thresholds and/or providing a compensation current to compensate for spectral shift and improve count stability.

Abstract: A radiation detector includes a radiation-sensitive semiconductor substrate, a cathode electrode disposed over a first surface of the radiation-sensitive semiconductor material substrate, and at least one anode electrode disposed over a second surface of the radiation-sensitive semiconductor material substrate, where the at least one anode electrode includes a semiconductor material layer including cadmium sulfide located between a metallic material and the semiconductor material substrate. In one embodiment, the radiation-sensitive semiconductor substrate includes cadmium zinc telluride (CZT), and the semiconductor material layer includes Cd1-xZnxTeyS1-y, where 0?x?0.5 and 0?y?0.5. Further embodiments include methods of fabricating a radiation detector that include exposing a surface of a radiation-sensitive semiconductor material substrate to a gas containing hydrogen sulfide at an elevated temperature to form a sulfide-containing semiconductor material layer.

Abstract: Application specific integrated circuits (ASICs) for direct attach radiation detector structures include an array of unit cells including signal processing channel circuitry and data transmission through-substrate vias (TSVs) with reduced cross-talk between the signal processing channel circuitry and the data transmission TSVs.

Abstract: An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.

Abstract: A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from <110> in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

Abstract: Various embodiments include methods of compensating for signal loss due to depth-of-interaction (DOI) effects in radiation detectors, thereby improving detector efficiency. Various embodiments may include detecting the amplitude of a primary charge signal in a first pixel of an array of detector pixels in response to a photon interaction event, detecting the amplitude of a secondary charge signal in a second pixel of the array, where the amplitude of the secondary charge signal has an opposite polarity than the polarity of the primary charge signal, and generating a corrected photon energy measurement of the photon interaction event by applying a correction to the detected amplitude of the primary charge signal based on the detected amplitude of the secondary charge signal. Further embodiments include methods of improving detector efficiency by compensating for both depth-of-interaction (DOI) and charge sharing effects.

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

Abstract: A method of fabricating radiation sensor dies includes forming a plurality of radiation-sensitive detector elements and a plurality of visible identifiers on at least some of the radiation-sensitive detector elements on a substrate, where each visible identifier is located in a different sub-region of the substrate containing a subset of the radiation-sensitive detector elements, and separating the sub-regions of the substrate from one another to provide a plurality of radiation sensor dies, where the visible identifier on each radiation sensor die uniquely identifies the radiation sensor die with respect to the other radiation sensor dies of the plurality of radiation sensor dies.

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Abstract: A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from <110> in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

Abstract: A recording head (16) is operated to form a regular pattern of image swaths on a recording media (17). The regular pattern of image features comprises a first set of image features (60A) that is formed with an imaging parameter set to a first predetermined value and a second set of image features (60B) is formed with an imaging parameter set to a second predetermined value, different from the first predetermined value. Image features in the first set and the second set are arranged on the recording media with a sub-scan spatial frequency equal to a non-integer multiple of a sub-scan spatial frequency of the image swaths. A scanner (40) generates data (47) of the scanned pattern, wherein a first integer multiple of a sampling spatial frequency employed by the scanner is equal to a second integer multiple of the sub-scan spatial frequency of the first set and the second set of image features.

Abstract: A method for adjusting an imaging parameter includes operating a recording head (16) to form a first set of image features (60A) on a media (17). Image features in the first set are formed while the imaging parameter is set to a first predetermined value. The recording head forms a second set of image features (60B) on the media. Features in the second set are formed while the imaging parameter is set to a second predetermined value different from the first predetermined value. Image features of the first set are interleaved with image features of the second set to form an interleaved pattern of image features on the media. Data (47) from the interleaved pattern is generated and analyzed to determine a quantified value representative of banding in the interleaved pattern. The imaging parameters are adjusted based on the quantified value.

Abstract: A recording head (16) is operated to form a regular pattern of image swaths on a recording media (17). The regular pattern of image features comprises a first set of image features (60A) that is formed with an imaging parameter set to a first predetermined value and a second set of image features (60B) is formed with an imaging parameter set to a second predetermined value, different from the first predetermined value. Image features in the first set and the second set are arranged on the recording media with a sub-scan spatial frequency equal to a non-integer multiple of a sub-scan spatial frequency of the image swaths. A scanner (40) generates data (47) of the scanned pattern, wherein a first integer multiple of a sampling spatial frequency employed by the scanner is equal to a second integer multiple of the sub-scan spatial frequency of the first set and the second set of image features.

Abstract: A method for adjusting an imaging parameter includes operating a recording head (16) to form a first set of image features (60A) on a media (17). Image features in the first set are formed while the imaging parameter is set to a first predetermined value. The recording head forms a second set of image features (60B) on the media. Features in the second set are formed while the imaging parameter is set to a second predetermined value different from the first predetermined value. Image features of the first set are interleaved with image features of the second set to form an interleaved pattern of image features on the media. Data (47) from the interleaved pattern is generated and analyzed to determine a quantified value representative of banding in the interleaved pattern. The imaging parameters are adjusted based on the quantified value.