Abstract: Various embodiments include methods of compensating for signal loss due to depth-of-interaction (DOI) effects in radiation detectors, thereby improving detector efficiency. Various embodiments may include detecting the amplitude of a primary charge signal in a first pixel of an array of detector pixels in response to a photon interaction event, detecting the amplitude of a secondary charge signal in a second pixel of the array, where the amplitude of the secondary charge signal has an opposite polarity than the polarity of the primary charge signal, and generating a corrected photon energy measurement of the photon interaction event by applying a correction to the detected amplitude of the primary charge signal based on the detected amplitude of the secondary charge signal. Further embodiments include methods of improving detector efficiency by compensating for both depth-of-interaction (DOI) and charge sharing effects.

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

Abstract: A method of fabricating radiation sensor dies includes forming a plurality of radiation-sensitive detector elements and a plurality of visible identifiers on at least some of the radiation-sensitive detector elements on a substrate, where each visible identifier is located in a different sub-region of the substrate containing a subset of the radiation-sensitive detector elements, and separating the sub-regions of the substrate from one another to provide a plurality of radiation sensor dies, where the visible identifier on each radiation sensor die uniquely identifies the radiation sensor die with respect to the other radiation sensor dies of the plurality of radiation sensor dies.

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Abstract: A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from <110> in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

Abstract: A recording head (16) is operated to form a regular pattern of image swaths on a recording media (17). The regular pattern of image features comprises a first set of image features (60A) that is formed with an imaging parameter set to a first predetermined value and a second set of image features (60B) is formed with an imaging parameter set to a second predetermined value, different from the first predetermined value. Image features in the first set and the second set are arranged on the recording media with a sub-scan spatial frequency equal to a non-integer multiple of a sub-scan spatial frequency of the image swaths. A scanner (40) generates data (47) of the scanned pattern, wherein a first integer multiple of a sampling spatial frequency employed by the scanner is equal to a second integer multiple of the sub-scan spatial frequency of the first set and the second set of image features.

Abstract: A method for adjusting an imaging parameter includes operating a recording head (16) to form a first set of image features (60A) on a media (17). Image features in the first set are formed while the imaging parameter is set to a first predetermined value. The recording head forms a second set of image features (60B) on the media. Features in the second set are formed while the imaging parameter is set to a second predetermined value different from the first predetermined value. Image features of the first set are interleaved with image features of the second set to form an interleaved pattern of image features on the media. Data (47) from the interleaved pattern is generated and analyzed to determine a quantified value representative of banding in the interleaved pattern. The imaging parameters are adjusted based on the quantified value.

Abstract: A recording head (16) is operated to form a regular pattern of image swaths on a recording media (17). The regular pattern of image features comprises a first set of image features (60A) that is formed with an imaging parameter set to a first predetermined value and a second set of image features (60B) is formed with an imaging parameter set to a second predetermined value, different from the first predetermined value. Image features in the first set and the second set are arranged on the recording media with a sub-scan spatial frequency equal to a non-integer multiple of a sub-scan spatial frequency of the image swaths. A scanner (40) generates data (47) of the scanned pattern, wherein a first integer multiple of a sampling spatial frequency employed by the scanner is equal to a second integer multiple of the sub-scan spatial frequency of the first set and the second set of image features.

Abstract: A method for adjusting an imaging parameter includes operating a recording head (16) to form a first set of image features (60A) on a media (17). Image features in the first set are formed while the imaging parameter is set to a first predetermined value. The recording head forms a second set of image features (60B) on the media. Features in the second set are formed while the imaging parameter is set to a second predetermined value different from the first predetermined value. Image features of the first set are interleaved with image features of the second set to form an interleaved pattern of image features on the media. Data (47) from the interleaved pattern is generated and analyzed to determine a quantified value representative of banding in the interleaved pattern. The imaging parameters are adjusted based on the quantified value.

Abstract: The present I/O ports comprise (1) a layered structure comprising (a) an unpatterned superstrate having at least one layer, (b) an unpatterned substrate having at least one layer, and (c) at least one intermediate layer sandwiched between the unpatterned superstrate and the unpatterned substrate, (2) a coupling region that is within the at least one intermediate layer and that comprises an arrangement of at least one optical scattering element and (3) at least one output waveguide. The present I/O ports can be effectively used in balanced photonic circuits and unbalanced photonic circuits.

Abstract: The present I/O ports comprise (1) a layered structure comprising (a) an unpatterned superstrate having at least one layer, (b) an unpatterned substrate having at least one layer, and (c) at least one intermediate layer sandwiched between the unpatterned superstrate and the unpatterned substrate, (2) a coupling region that is within the at least one intermediate layer and that comprises an arrangement of at least one optical scattering element and (3) at least one output waveguide. The present I/O ports can be effectively used in balanced photonic circuits and unbalanced photonic circuits.

Abstract: The present I/O ports comprise (1) a layered structure comprising (a) an unpatterned superstrate having at least one layer, (b) an unpatterned substrate having at least one layer, and (c) at least one intermediate layer sandwiched between the unpatterned superstrate and the unpatterned substrate, (2) a coupling region that is within the at least one intermediate layer and that comprises an arrangement of at least one optical scattering element and (3) at least one output waveguide. The present I/O ports can be effectively used in balanced photonic circuits and unbalanced photonic circuits.

Abstract: A process and apparatus for measuring the amount of water in vapor has been developed. The process begins with adjusting the level of water in a vessel housing a capacitance probe so as to immerse from about 5 to about 15 percent of the probe and measuring and recording an initial capacitance, CI. A measured amount of vapor is passed through a condenser, the condensed water is conducted to the vessel and a final capacitance, CF, is measured and recorded. The change in capacitance is calculated, &Dgr;C=(CF−CI), and the difference, &Dgr;C, along with a calculation correlation is used to determine the amount of water condensed. With the amount of water condensed and the measured amount of vapor passed through the vessel, the amount of water in the vapor may be readily calculated. The vapor to be analyzed may be at a temperature as high as about 1000° C.

Abstract: The present I/O ports comprise (1) a layered structure comprising (a) an unpatterned superstrate having at least one layer, (b) an unpatterned substrate having at least one layer, and (c) at least one intermediate layer sandwiched between the unpatterned superstrate and the unpatterned substrate, (2) a coupling region that is within the at least one intermediate layer and that comprises an arrangement of at least one optical scattering element and (3) at least one output waveguide. The present I/O ports can be effectively used in balanced photonic circuits and unbalanced photonic circuits.

Abstract: This invention is related to the field of integrated optics (that is, integrated photonics). In particular, the present devices are optical fiber passive alignment fixtures that comprise at least two planar or substantially planar fiducial surfaces and that align optical fibers with planar or substantially planar optical (that is, photonic) circuits, and enable effective attachment of the optical fibers to the planar or substantially planar photonic circuits. The alignment and attachment take place with the longitudinal axis of each optical fiber oriented at an angle that is normal, near-normal or off-normal to a plane (that is, the top planar surface) of the planar or substantially planar photonic circuit.

Abstract: A process and apparatus for controlling the amount of water in the vapor of multiple zones of a calcination or oxidation operation have been developed. The process begins with calibration of a vessel housing a capacitance probe. The level of water in a vessel housing the capacitance probe is adjusted so as to immerse from about 5 to about 15 percent of the probe and measuring and recording an initial capacitance, CI. A measured amount of vapor is passed through a condenser, the condensed water is conducted to the vessel and a final capacitance, CF, is measured and recorded. The change in capacitance is calculated, &Dgr;C=(CF−CI), and the difference, &Dgr;C, is used along with the calibration to determine the amount of water condensed. With the amount of water condensed and the measured amount of vapor passed through the vessel, the amount of water in the vapor may be readily calculated.

Abstract: An optical signal is modulated by passing it through an optical signal path in an optical modulator. Different electric fields are applied across a first pair of parallel phase modulation arms so as to produce different signal phase modulations in respective portions of the optical signal; and different electric fields are also applied across a second pair of parallel phase modulation arms so as to produce different signal phase modulations in respective portions of the optical signal. The different magnitudes of the electric fields are pre-determined so as to control chirp and to promote modulation linearity. The chirp in the optical signal output from the optical modulator may be reduced or even eliminated or may be predetermined to counteract or even eliminate chirp generated in a transmission path.