Abstract: A method for use in the manufacture of a microelectronic device is set forth. The method include to a first step in which a workpiece including exposed metallized surfaces and residues is provided. The workpiece, including the exposed metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an additive layer of an anti-corrosive compound on the exposed metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. When the surfaces are principally comprised of aluminum, the solution may be comprised of DI water, an ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Abstract: A method for use in the manufacture of a microelectronic device is set forth. The method include to a first step in which a workpiece including exposed metallized surfaces and residues is provided. The workpiece, including the exposed metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an additive layer of an anti-corrosive compound on the exposed metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. When the surfaces are principally include of aluminum, the solution may be include of DI water, an ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Abstract: A method for use in the manufacture of a microelectronic device is set forth. The method includes a first step in which a workpiece including exposed aluminum metallized surfaces and residues is provided. The workpiece, including the exposed aluminum metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an aluminosilicate on the exposed aluminum metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. Preferably, the solution is comprised of DI water, and ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Abstract: A method for use in the manufacture of a microelectronic device is set forth. The method include to a first step in which a workpiece including exposed metallized surfaces and residues is provided. The workpiece, including the exposed metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an additive layer of an anti-corrosive compound on the exposed metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. When the surfaces are principally comprised of aluminum, the solution may be comprised of DI water, an ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Abstract: A method for use in the manufacture of a microelectronic device is set forth. The method include to a first step in which a workpiece including exposed aluminum metallized surfaces and residues is provided. The workpiece, including the exposed aluminum metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an aluminosilicate on the exposed aluminum metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. Preferably, the solution is comprised of DI water, and ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Abstract: Methods for removing particulates from the surfaces of semiconductor materials, such as silicon substrates and wafers. The methods use repeated oxide growth steps and intervening oxide removal. Rinses are preferably used between the oxide growth and removal steps, such as with purified water. The oxide growth steps use an oxidation agent and a base, for example hydrogen peroxide and ammonium hydroxide. The oxide removal steps use a suitable oxide removal agent such as a hydrogen halide acid, for example hydrogen fluoride.