Patents by Inventor Michael Kiene

Michael Kiene has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitrogen-enriched low-k barrier layer for a copper metallization layer
    Patent number: 7022602
    Abstract: The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier layer is provided with a surface modified by plasma treatment. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in the low-k dielectric layer is significantly suppressed, so that in a subsequent photolithography step interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.
    Type: Grant
    Filed: November 19, 2003
    Date of Patent: April 4, 2006
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Hartmut Ruelke, Joerg Hohage, Thomas Werner, Michael Kiene
  • Semiconductor device including a low-k metallization layer stack for enhanced resistance against electromigration
    Publication number: 20060043588
    Abstract: A technique is disclosed which enables the formation of a metallization layer being substantially comprised of a low-k dielectric material, wherein a compressive stress layer provides enhanced electromigration behavior of the metallization layer. In particular embodiments, a compressive silicon dioxide layer may be formed on or in the vicinity of a dielectric barrier layer and a metallization layer based on SiCOH.
    Type: Application
    Filed: April 26, 2005
    Publication date: March 2, 2006
    Inventors: Christof Streck, Hartmut Ruelke, Michael Kiene
  • Nitrogen-enriched low-k barrier layer for a copper metallization layer
    Publication number: 20040214430
    Abstract: The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier layer is provided with a surface modified by plasma treatment. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in the low-k dielectric layer is significantly suppressed, so that in a subsequent photolithography step interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.
    Type: Application
    Filed: November 19, 2003
    Publication date: October 28, 2004
    Inventors: Hartmut Ruelke, Joerg Hohage, Thomas Werner, Michael Kiene