Patents by Inventor Michael Kishinevski

Michael Kishinevski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7241360
    Abstract: There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of the film deposition. A power supply with a reversing voltage waveform is utilized that neutralizes the electric charge on the substrate and the vacuum chamber apparatus. A power supply applies an ac voltage to the anode of the ion source and a rectified ac voltage to the cathode. The ground terminal of the power supply is connected to the vacuum chamber. The rectifying circuit is comprised of zener diodes that clamp the voltage in the circuit from spikes during plasma ignition and a capacitor connected to negatively bias the cathode when there is no plasma discharge.
    Type: Grant
    Filed: April 19, 2002
    Date of Patent: July 10, 2007
    Assignee: Advanced Energy Industries, Inc.
    Inventors: Andrew Shabalin, Colin Quinn, Michael Kishinevski
  • Publication number: 20030209198
    Abstract: There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of the film deposition. A power supply with a reversing voltage waveform is utilized that neutralizes the electric charge on the substrate and the vacuum chamber apparatus. A pulsed operation can be used that is applicable to a low voltage mode of the source wherein current may not be limited by the discharge voltage so average current cant be kept high by increasing peak current during the duty cycle. Also, in the high voltage mode neutralization can be achieved with no significant loss of ion beam etch rate despite a shortened duty cycle.
    Type: Application
    Filed: November 1, 2002
    Publication date: November 13, 2003
    Inventors: Andrew Shabalin, Colin Quinn, Michael Kishinevski, David S. Lee
  • Publication number: 20030196602
    Abstract: There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of the film deposition. A power supply with a reversing voltage waveform is utilized that neutralizes the electric charge on the substrate and the vacuum chamber apparatus. A power supply applies an ac voltage to the anode of the ion source and a rectified ac voltage to the cathode. The ground terminal of the power supply is connected to the vacuum chamber. The rectifying circuit is comprised of zener diodes that clamp the voltage in the circuit from spikes during plasma ignition and a capacitor connected to negatively bias the cathode when there is no plasma discharge.
    Type: Application
    Filed: April 19, 2002
    Publication date: October 23, 2003
    Inventors: Andrew Shabalin, Colin Quinn, Michael Kishinevski