Abstract: The invention relates to a diaphragm for a diaphragm valve having a functional region and a clamping region surrounding the functional region, at least one main body of the diaphragm freeing at least one opening in the clamping region, in which at least one gripping aid comprising a plastics material is provided.

Abstract: An energy storage system includes a housing in which a plurality of storage cells are arranged. The storage cells are thermally insulated from each other via a device arranged between the storage cells. The device is designed in such a way that the storage cells are spaced apart from each other. The device is made from temperature-resistant material. The device has projections and depressions. The device contains a material which is configured to be subjected to an endothermic chemical conversion when a temperature of 200° C. is exceeded.

Abstract: The invention relates to an energy storage system (1) comprising a housing (2) in which a plurality of storage cells (3) are arranged, the storage cells (3) are thermally insulated from each other by means of a device (4) mounted between the storage cells (3). The device (4) is designed in such a way that the storage cells (3) are spaced apart and the device (4) is made from temperature-resistant elastic material.

Abstract: A semiconductor power switch comprises at least a first IGBT and a second IGBT. The collectors of the first and second IGBTs are connected to each other, and the emitters of the first and second IGBTs are connected to each other. The first IGBT is an IGBT type with a comparatively low collector-emitter on-voltage and a comparatively high turn-on or turn-off switching energy. In contrast thereto, the second IGBT is an IGBT type with a comparatively high collector-emitter on-voltage and a comparatively low turn-on or turn-off switching energy. Both IGBTs receive gate signals from a control circuit for switching the power switch on during a first time interval and switching the power switch off during a second time interval. The control circuit is designed to supply an on-signal to the second IGBT during the whole first time interval and another on-signal to the first IGBT during only a part of the first time interval, which is less than the whole.

Abstract: In a switching arrangement for controlling a load-controlled power switch via a transformer Ü, a voltage signal is inputted into the transformer, the voltage signal being comprised of impulses of short duration T1p, T1n in positive and negative directions. Two field effect transistors F1, F2 at the secondary side of the transformer Ü convert the impulses T1p, T1n into impulses T3p, T3n in positive and negative directions which reliably control the power switch LT, the impulse duration of the impulses T3p, T3n being extended to the beginning of the next input impulses with reversed voltage directions T1n, T1p. A diode D1 and D2, respectively, is disposed in each of the field effect transistors F1and F2 between the source terminal S and the drain terminal D thereof. A respective series switch is activated ahead of the gate terminals of each respective field effect transistor F1 and F2.