Abstract: A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers enhance optical confinement with very small losses. Furthermore, the use of InGaN waveguide or cladding layers can improve the structural integrity of active region epilayers because of reduced lattice mismatch between waveguide layers and the active region.

Abstract: A compact sensor for detecting the presence of biological or chemical species includes a microdisk laser and a wavelength shift detector. The microdisk laser is coated with a biological or chemical recognition element, which binds preferentially with a target analyte. Because the recognition element and the target analyte adhere to the sidewall surface of the microdisk laser, they increase the effective diameter of the laser, which shifts the output wavelength by a detectable amount. The presence of a wavelength shift indicates the presence of the target analyte, and the magnitude of the wavelength shift corresponds to the mass load of the target analyte on the sidewall surface of the microdisk laser.

Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.

Abstract: Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region. In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.

Abstract: A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.

Abstract: A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching.

Abstract: A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching.

Abstract: A compact sensor for detecting the presence of biological or chemical species includes a microdisk laser and a wavelength shift detector. The microdisk laser is coated with a biological or chemical recognition element, which binds preferentially with a target analyte. Because the recognition element and the target analyte adhere to the sidewall surface of the microdisk laser, they increase the effective diameter of the laser, which shifts the output wavelength by a detectable amount. The presence of a wavelength shift indicates the presence of the target analyte, and the magnitude of the wavelength shift corresponds to the mass load of the target analyte on the sidewall surface of the microdisk laser.

Abstract: A compact sensor for detecting the presence of biological or chemical species includes a microdisk laser and a wavelength shift detector. The microdisk laser is coated with a biological or chemical recognition element, which binds preferentially with a target analyte. Because the recognition element and the target analyte adhere to the sidewall surface of the microdisk laser, they increase the effective diameter of the laser, which shifts the output wavelength by a detectable amount. The presence of a wavelength shift indicates the presence of the target analyte, and the magnitude of the wavelength shift corresponds to the mass load of the target analyte on the sidewall surface of the microdisk laser.

Abstract: Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures.

Abstract: An improved method of analyzing target analytes in a sample is described. The method is based on anti-resonant guided optical waveguides which enables a strongly improved light-target interaction since the light can be guided within the target-containing medium. The light-target interaction can be monitored by many different means to determine characteristics of the target analyte. The anti-resonant waveguide concept is suitable for a large variety of characterization methods and combinations of them, since it is relatively unaffected by changes to both wavelength and film thickness.

Abstract: A sample detection system including an anti-resonant waveguide, including a sample having a first index of refraction, a top layer and a substrate surrounding the sample, where the top layer has a second index of refraction, and the substrate has a third index of refraction. The second index of refraction, and the third index of refraction are both greater than the first index of refraction. A detection device of the system includes a low power light source used to direct light into the sample and generate an anti-resonant optical mode in the sample, and an analyzing system to detect the interaction of the light propagating in the sample.

Abstract: A grating-outcoupled microcavity disk resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a grating region in the plane of the grating-outcoupled microcavity disk resonator. The grating region provides an outcoupling or loss mechanism that symmetrically interacts with the clockwise and counterclockwise whispering gallery modes, thereby making the resonator capable of surface emission.

Abstract: A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning many device types including regular lasers and VCSEL structures. The adjustment also allows for mass production of lasers of many different frequencies on a single wafer substrate, a system particularly desirable for wavelength division multiplexing systems.

Abstract: A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.

Abstract: A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.

Abstract: A method and structure for integrating many optical devices on a single wafer is described. The method fabricates passive interconnect devices using hydrogenation techniques. Lateral optical confinement is achieved by hydrogenating regions laterally adjacent to the waveguide core. Vertical optical confinement is adjusted by careful control of the hydrogen content of the waveguide core itself.

Abstract: A sample detection system including an anti-resonant waveguide, including a sample having a first index of refraction, a top layer and a substrate surrounding the sample, where the top layer has a second index of refraction, and the substrate has a third index of refraction. The second index of refraction, and the third index of refraction are both greater than the first index of refraction. A detection device of the system includes a low power light source used to direct light into the sample and generate an anti-resonant optical mode in the sample, and an analyzing system to detect the interaction of the light propagating in the sample.

Abstract: Substrates having increased thermal conductivity are provided, comprising a body having opposed surfaces and a cavity that opens on at least one surface, the cavity containing at least one material having a greater thermal conductivity than the body. Devices are provided comprising a substrate and a semiconductor over a surface of the substrate. Methods of forming devices according to the invention are also provided.

Abstract: Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region. In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.